1. Silicon wafers at sub-μm separation for confined4He experiments
- Author
-
Francis M. Gasparini, A. Petrou, W. Y. Yu, John A. Lipa, D. Bishop, and S. Mehta
- Subjects
Materials science ,Interference (communication) ,Silicon ,chemistry ,business.industry ,Wafer bonding ,General Physics and Astronomy ,Optoelectronics ,chemistry.chemical_element ,Wafer ,business - Abstract
We have successfully achieved a uniform sub-μm gap between two flat silicon surfaces. This is done using two 2″ diameter, 0.010″ thick silicon wafers, one of which has a small central hole used later for experiments with liquid4He. The other wafer has a SiO2 pattern made lithographically. The two wafers are bonded together using direct wafer bonding and the uniformity of spacing is found to be better than 1% from IR interference experiments.
- Published
- 1996
- Full Text
- View/download PDF