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A green approach was employed for the synthesis of heterostructures of g-C 3 N 4 @MoO 3 and characterized by XRD, UV–vis, SEM and FTIR techniques to evaluate the structural, morphological, and optical features of the heterostructures. The XRD analysis revealed the high crystallinity and intensity of g-C 3 N 4 /MoO 3 higher than the g-C 3 N 4 and MoO 3. The g-C 3 N 4 shows a crumpled layered arrangement and a MoO 3 rod-like structure. The refractive index (n), bandgap energy (E g) and extinction coefficient (k) (optical properties) are determined by UV–vis spectroscopy. The g-C 3 N 4 /MoO 3 optical properties like k (2.15), n (2.37), dielectric coefficient (0.43), electronegativity (0.739) and bandgap energy (2.75 eV) were enhanced significantly. In visible region, the g-C 3 N 4 /MoO 3 demonstrated excellent performance for the degradation of RhB dye. The mobility and detachment of electron-hole pairs in type-II heterojunction semiconductors are responsible for the enhancement of photocatalytic activity (PCA) in visible region, which can be utilized for the dyes remediation in effluents under natural sunlight irradiation. [Display omitted] • A green route was employed for graphatic-C 3 N 4 @MoO 3 heterostructure synthesis. • Characterization was done by XRD, UV–vis, SEM and FTIR techniques. • The optical properties enhanced of g-C 3 N 4 @MoO 3 versus g-C 3 N 4 and MoO 3. • g-C 3 N 4 @MoO 3 showed promising catalytic activity under visible light irradiation. [ABSTRACT FROM AUTHOR]