10 results on '"Shvets, V. A."'
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2. Origin of Porous Silicon Photoluminescence Peaks in the Wavelength Range 460–700 nm
3. Special aspects of the photoluminescence of thermally annealed porous silicon layers
4. Pore nucleation and growth in n-type Si during its electrochemical etching
5. A model of the mechanism of the chemical interaction of the etchant ion (HF2)– with silicon during its electrochemical etching in hydrofluoric acid solutions
6. The role of the etchant ion in the formation and growth of pores in silicon during its etching in hydrofluoric acid solutions
7. The effect of the hydrofluoric acid etchant–silicon system anisotropy on the shape of pores formed upon electrochemical etching of silicon
8. Control of the dimension of nanopores and the structure of layers of nanoporous silicon during its electrolytic etching in hydrofluoric acid solutions
9. Synthesis of two new thymine-containing negatively charged PNA monomers
10. The effect of the type of conductivity on the initiation and formation of pores in silicon during electrochemical etching
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