13 results on '"Huili Grace Xing"'
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2. A Composite TE-TFE-FE Model for Schottky Barrier Reverse Current over the Entire Electric-Field Range.
3. First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates.
4. Large Signal Response of AlN/GaN/AlN HEMTs at 30 GHz.
5. Very High Parallel-Plane Surface Electric Field of 4.3 MV/cm in Ga2O3 Schottky Barrier Diodes with PtOx Contacts.
6. Realization of the First GaN Based Tunnel Field-Effect Transistor.
7. Buried tunnel junction for p-down nitride laser diodes.
8. Efficient InGaN p-Contacts for deep-UV Light Emitting Diodes.
9. Field-plated Ga2O3 Trench Schottky Barrier Diodes with a Record High Figure-of-merit of 0.78 GW/cm2.
10. Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier Diodes.
11. A Single-Device Embodiment of XNOR Logic: TransiXNOR.
12. 1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier Diodes.
13. Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect Engineering.
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