35 results on '"Hartmann, Jean-Michel"'
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2. Epitaxy of Group-IV Semiconductors for Quantum Electronics
3. Nanosecond Laser Annealing of In-Situ Boron-Doped Ge Layers for Dopant Activation
4. (Best Student Presentation Award) Reduced Pressure – Chemical Vapor Deposition of Monocrystalline and Polycrystalline Si(:B) and SiGe(:B) Layers on Blanket Wafers
5. (G03 - Best Student Presentation Award) Advances in In-situ Boron and Phosphorous Doping of SiGeSn
6. Low Temperature Cyclic Deposition/Etch (CDE) of Tensile-Strained Si:P
7. Ge Nano-Heteroepitaxy: From Nano-Pillars to Thick Coalesced Layers
8. Very Low Temperature Tensile and Selective Si:P Epitaxy for Advanced CMOS Devices
9. Impact of Nanosecond Laser Annealing on the Electrical Properties of Highly Boron-Doped Ultrathin Strained Si0.7Ge0.3 Layers
10. Vertical GeSn/Ge Heterostructure Gate-All-Around Nanowire p-MOSFETs
11. Microstructure Evolution of Nanosecond Laser Annealed Si/Si1-XGex/Si Structures
12. Impact of the Liquid/Solid Interface on the Strain State of Si1-XGex Layers Processed By Nanosecond Laser Annealing
13. (G03 Best Paper Award Winner) Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy
14. Wet and Siconi® Surface Preparation Sequences for SiGe Epitaxial Regrowth
15. Ultra-High Boron Doping of Si and Ge for Nanoelectronics and Photonics
16. (Invited) Vertical Gate All Around GeSn/Ge Heterostructure Transistors
17. (Invited) Tensile Strain Engineering and Defects Management in GeSn Laser Cavities
18. Epitaxy of Pseudomorphic GeSn Layers with Germane (GeH4) or Digermane (Ge2H6) as Ge Precursors and Tin Tetrachloride (SnCl4) as the Sn Precursor
19. Boron and Phosphorous Doping of GeSn for Photodetectors and Light Emitting Diodes
20. (Invited) Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters
21. Composition and Strain Evolution of Undoped Si0.8Ge0.2 Layers Submitted to UV-Nanosecond Laser Annealing
22. Investigation of the Growth of Si-Ge-Sn Pseudomorphic Layers on 200 mm Ge Virtual Substrates: Impact of Growth Pressure, HCl and Si2H6 Flows
23. Comparative Analysis of Ni- and Ni0.9Pt0.1-Ge0.9Sn0.1 Solid-State Reaction by Combined Characterizations Methods
24. Soft Surface Activated Bonding of Hydrophobic Silicon Substrates.
25. Doping Effects in Direct Bandgap GeSn Light Emitter
26. Atmospheric Pressure Selective Epitaxial Growth of Heavily in-situ Phosphorous-Doped Si(:C) Raised Sources and Drains
27. Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors
28. 300 mm SiGe-On-Insulator Substrates with High Ge Content (70%) Fabricated Using the Smart Cut™ Technology
29. Investigation of the Low Temperature / High Temperature Approach to Produce Si0.5Ge0.5 and Pure Ge Strain Relaxed Buffers
30. (Invited) Evaluation of Stacked Nanowires Transistors for CMOS: Performance and Technology Opportunities
31. High Mobility Materials on Insulator for Advanced Technology Nodes
32. A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration
33. In Situ Studies of Germanium-Tin and Silicon-Germanium-Tin Thermal Stability
34. Invited: SOI-Type Bonded Structures for Advanced Technology Nodes
35. Strain in Epitaxial Si/SiGe Graded Buffer Structures Grown on Si (100), Si (110) and Si(111): a Raman Spectroscopy Study
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