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2. Epitaxy of Group-IV Semiconductors for Quantum Electronics

4. (Best Student Presentation Award) Reduced Pressure – Chemical Vapor Deposition of Monocrystalline and Polycrystalline Si(:B) and SiGe(:B) Layers on Blanket Wafers

5. (G03 - Best Student Presentation Award) Advances in In-situ Boron and Phosphorous Doping of SiGeSn

7. Ge Nano-Heteroepitaxy: From Nano-Pillars to Thick Coalesced Layers

8. Very Low Temperature Tensile and Selective Si:P Epitaxy for Advanced CMOS Devices

9. Impact of Nanosecond Laser Annealing on the Electrical Properties of Highly Boron-Doped Ultrathin Strained Si0.7Ge0.3 Layers

13. (G03 Best Paper Award Winner) Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy

17. (Invited) Tensile Strain Engineering and Defects Management in GeSn Laser Cavities

20. (Invited) Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters

25. Doping Effects in Direct Bandgap GeSn Light Emitter

27. Integration of Low Temperature SiGe:B Raised Sources and Drains in p-Type FDSOI Field Effect Transistors

28. 300 mm SiGe-On-Insulator Substrates with High Ge Content (70%) Fabricated Using the Smart Cut™ Technology

30. (Invited) Evaluation of Stacked Nanowires Transistors for CMOS: Performance and Technology Opportunities

31. High Mobility Materials on Insulator for Advanced Technology Nodes

32. A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration

33. In Situ Studies of Germanium-Tin and Silicon-Germanium-Tin Thermal Stability

34. Invited: SOI-Type Bonded Structures for Advanced Technology Nodes

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