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Thin film electrodes have the advantage for fundamental study owing to the ability to not use binder and conductive additive in testing them as anodes. Particularly, Si thin film electrodes have attracted the most attention due to their superior cyclic performance and high initial coulombic efficiency. It is well known that the problem is crack formation which leads to poor cycle ability during charge/discharge at Si thin films. In order to study the behavior of crack formation at Si anodes with different crystalline, amorphous Si (a-Si) thin films have been treated by laser annealing technique. When the heat exceeds the melting point of the a-Si, the Si melt and it generally form polycrystalline structures (p-Si) during re-solidification. Crystalline of a-Si is dramatically transformed to p-Si of cylindrical column type whose diameter ranges from tens of nanometers to hundred nanometers in p-Si thin film by the laser annealing as shown in Fig. 1. We prepared two adjacent Si patterns, whose size is 30 μm × 30 μm, with different crystalline. At initial stage, we found that the behavior of crack formation was very different in term of shape, size, and density of cracks. In this work, the cracking feature of Si films with different crystalline after first and 30th cycles has been investigated. Fig.1. Optical and cross-sectional TEM images of a-Si, and p-Si thin film.