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GaN nanowires were synthesized by reaction of metal gallium vapor with ammonia and hydrogen gases at the temperature of 700 °C on the amorphous SiO2 substrate. The morphologies of GaN nanowires are wirelike with a length up to 5 μm and the average diameter of GaN nanowires measured by transmission electron microscopy (TEM) is about 25 nm. The x-ray diffraction analysis of as-synthesized products indicates that the nanowires have the hexagonal wurtzite structure of GaN crystal. The corresponding electron diffraction pattern also indicates that the as-synthesized GaN nanowires exhibited a single-crystal feature with uniform oxygen doping characterized by electron energy loss spectroscopy.