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Thin layers of Ti were sputtered onto Si wafers and then oxidized using the so-called constant current mode of microwave plasma assisted oxidation. The resulting TiO2, characterized ex situ, was determined to have a density of 4.1 g/cm3 and a refractive index at 633 nm of 2.34. Samples were then annealed in both O2 and N2 atmospheres at 600 oC for 1 hour. Annealing the TiO2 appears to produce no interaction of the oxide with the Si substrate but re-arrangement of the network occurred resulting in increased packing density. The annealed, anodic TiO2 had a density of 4.25 g/cm3 and a refractive index of 2.38. The dielectric constant was also determined to be 42. No phase transition, from amorphous to rutile or anatase, was observed. The properties of this new amorphous TiO2 polymorph are presented.