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Your search keyword '"Chevalier, Pascal"' showing total 13 results
Start Over Author "Chevalier, Pascal" Journal ecs transactions
13 results on '"Chevalier, Pascal"'

7. Prospects for Complementary SiGeC BiCMOS on Thin-Film SOI

Author

Chantre, Alain, primary, Avenier, Gregory, additional, Boissonnet, Laurence, additional, Borot, Gael, additional, Bouillon, Pierre, additional, Brossard, Florence, additional, Chevalier, Pascal, additional, Deleglise, Florence, additional, Dutartre, Didier, additional, Duvernay, Julien, additional, Fregonese, Sebastien, additional, Judong, Fabienne, additional, Pantel, Roland, additional, Perrotin, Andre, additional, Rauber, Bruno, additional, Rubaldo, Laurent, additional, Saguin, Fabienne, additional, Schwartzmann, Thierry, additional, Vandelle, Benoit, additional, and Zimmer, Thomas, additional

Published
2006
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9. fMAX Increase to 500 GHz of SiGe HBTs at Low Temperature

Author

Zerounian, Nicolas, Diallo, Mariam, Aniel, Frederic, Chevalier, Pascal, and Chantre, Alain

Abstract

SiGe HBTs exhibiting fmax of 400 GHz at room temperature have shown fmax value of 500 GHz at low temperature (30 K). It helps highlighting which are the limiting factors to reach 0.5 THz fmax target of the DotFive European project at room temperature.

Published
2010

10. 3-D Regional Transit Time Analysis of SiGe HBTs on Thin-Film SOI

Author

Bellini, Marco, Turowski, Marek, Avenier, Gregory, Chantre, Alain, and Chevalier, Pascal

Abstract

The regional transit time analysis technique is extended from 1-D to 3-D and used to investigate the AC performance of a SiGe HBT-on-SOI fabricated with a novel contact layout. As confirmed by TCAD simulations, the relocation of the base contacts out-of-plane with respect to the emitter and the collector results in a true 3-D current flow. Consequently, AC analysis and optimization cannot be performed with conventional 1-D regional transit time analysis.

Published
2008

11. Investigation of Mg Diffusion in Ta(N) Based Electrodes on HfO2for Sub-32nm CMOS Gate-Last Transistors

Author

Gassilloud, Rémy, Maunoury, Cécile, Leroux, Charles, Chevalier, Pascal, Veillerot, Marc, Dressler, Cyril, Aussenac, Francois, Martin, Francois, and Maitrejean, Sylvain

Abstract

Magnesium alloyed with Ta and TaN is investigated as possible gate electrode on HfO2 dielectric. When Mg is deposited on Ta, we observe TaMg alloy formation and HfO2 degradation induced by Mg annealed at 440{degree sign}C. When TaN is deposited on HfO2 prior to Mg, TaN acts as chemical barrier against Mg diffusion and minimizes direct reaction of Mg with HfO2. TaN controls the Mg diffusion through complex mechanisms. Beside, sub-stoichiometric TaNx electrode without any additive is stable on HfO2 at 440{degree sign}C, with N+ 4.3eV band-edge work-function. We discuss on the relevance to use low-work-function additive in refractory metal gate on HfO2 dielectric.

Published
2013
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12. Influence of the Selectively Implanted Collector Integration on +400 GHz fMAXSi/SiGe:C HBTs

Author

Lacave, Thomas, Chevalier, Pascal, Campidelli, Yves, Depoyan, Linda, Berthier, Ludovic, André, Frederic, Buczko, Michel, Avenier, Gregory, Gaquière, Christophe, and Chantre, Alain

Abstract

Optimization of SiGe HBT performances towards very high cut-off frequencies fT and fMAX requires high collector doping level together with low collector/base junction capacitance CBC. This compromise is usually achieved by localizing a dedicated collector implant (so-called SIC implant) under the intrinsic emitter/base region of the device. In this paper, we present the influence of the integration choice of the Selectively Implanted Collector (SIC) on the performance of +400 GHz fMAX Si/SiGe:C HBTs featuring a selective epitaxy of the base [1]. We describe in the first part of this paper the different process flows investigated for the SIC integration. Second part is dedicated to the analysis of the electrical results obtained for the different SIC modules and to the understanding of these results. We conclude on the perspectives to further improve hf performances.

Published
2010
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13. fMAXIncrease to 500 GHz of SiGe HBTs at Low Temperature

Author

Zerounian, Nicolas, Diallo, Mariam, Aniel, Frédéric, Chevalier, Pascal, and Chantre, Alain

Abstract

SiGe HBTs exhibiting fmax of 400 GHz at room temperature have shown fmax value of 500 GHz at low temperature (30 K). It helps highlighting which are the limiting factors to reach 0.5 THz fmax target of the DotFive European project at room temperature.

Published
2010
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