100 results on '"De Gendt, Stefan"'
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2. Rare-Earth Metal Scandate High-k Layers
3. Threshold Voltage Control in PMOSFETs with Polysilicon or Fully-Silicided Gates on Hf-Based Gate Dielectric Using Controlled Lateral Oxidation
4. DyScHfOx as High-κ Gate Dielectrics: Structural and Electrical Properties
5. Instability and Defects in Gate Dielectric: Similarity and Differences Between Hf-Stacks and SiO2
6. Workfunction (WF) Simulations of Ta/HfO2, Ta2C/HfO2 and Ta2C/La2O3/HfO2 Capped High-k Stacks
7. Combinatorial Methodology for the Exploration of Metal Gate Electrodes on HfO2 for the Advanced Gate Stack
8. Physical Characterization of the Metal/High-k Layer Interaction upon Annealing
9. Substrate-limited Mobility in Single- and Bi-layer Graphene on Dielectric Materials
10. Electrochemical and Analytical Study of the Si Etching Mechanism in HF
11. Novel Device Concepts for Nanotechnology: The Nanowire Pinch-Off FET and Graphene TunnelFET
12. Tunnel Field-Effect Transistors for Future Low-Power Nano-Electronics
13. Trends and Challenges in Si and Hetero-Junction Tunnel Field Effect Transistors
14. Development of a Wet Silicon Removal Process for Replacement Metal Gate and Sacrificial Fin
15. Area-Selective Deposition by a Combination of Organic Film Passivation and Atomic Layer Deposition
16. (Invited) Graphene Synthesis and Transfer Improvements for Applications in the Semiconductor Industry
17. Nanoscale Etching: Dissolution of III-As and Ge in HCl/H2O2 Solutions
18. Engineering the III-V Gate Stack Properties by Optimization of the ALD Process
19. Use of a Purged FOUP to Improve H-Terminated Silicon Surface Stability Prior to Epitaxial Growth
20. (Invited) Vanadium Dioxide for Selector Applications
21. (Invited) Wetting Behavior of Aqueous Solutions on High Aspect Ratio Nanopillars with Hydrophilic Surface Finish
22. Watermark Formation Mechanism by Evaporation of Ultra-Pure Water: Study the Effect of Ambient
23. Study of InP Surfaces after Wet Chemical Treatments
24. Effect of Boric Acid on the Nucleation and Growth of Ni Nanoparticles for CNT Growth
25. Galvanic Corrosion of PN Junctions during the Dielectric Removal with HF for RMG Transistors
26. PR and BARC Wet Strip in BEOL Patterning Using a UV-Enabled Aqueous Process
27. (Invited) Vanadium Oxide as a Memory Material
28. Silver-Assisted Etching of Silicon Nanowires
29. Integration of Vertical Carbon Nanotube Bundles for Interconnects
30. Characterisation of High-k Containing Nanolayers by Reference-Free X-Ray Fluorescence Analysis with Synchrotron Radiation
31. High Depth Resolution Depth Profile Analysis of Ultra Thin High-κ Hf Based Films using MEIS Compared with XTEM, XRF, SE and XPS
32. Modeling of Alternative High-k Dielectrics for Memory Based Applications
33. Dielectric Response of Ta2O5, NbTaO5 and Nb2O5 from First-Principles Investigations
34. Controlled III/V Nanowire Growth by Selective-Area Vapour Phase Epitaxy
35. Growth and Electrical Characterization of Horizontally Aligned CNTs
36. Replacing SiO2 - Material and Processing Aspects of New Dielectrics
37. Trapping in 1nm EOT high-k / MG
38. Screening of High-k Layers in MIS and MIM Capacitors Using Aqueous Chemical Solution Deposition
39. AVD and MOCVD TaCN-based Films for Gate Metal Applications on High k Gate Dielectrics
40. Investigation on Molybdenum and Its Conductive Oxides as p-type Metal Gate Candidates
41. Atomic Layer Deposition of HfO2 on (100) and (110) Oriented Silicon Surfaces
42. Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications
43. Metal/High-K Interface Interactions Upon High Temperature Annealing - Are They Cause of Workfunction Changes
44. Evaluation of Nb(Si)N as Metal Gate Material
45. Growth Studies and Reaction Mechanism of the Atomic Layer Deposition of Hafnium Oxide
46. Wet Etch Characteristics of Hafnium Silicate Layers
47. Development of a Cu and W Compatible PERR Clean in BEOL Advanced Interconnect Patterning
48. (Invited) Selective Etch of Si and SiGe for Gate All-Around Device Architecture
49. N-Junctionless Transistor Prototype: Manufacturing Using a Focused Ion Beam System
50. Evaluation of the Si0.8Ge0.2-on-Si Epitaxial Quality by Inline Surface Light Scattering: A Case Study on the Impact of Interfacial Oxygen
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