Search

Effect of current compliance on the resistive switching characteristics of SmGdO3 based resistive random access memory devices has been investigated. It was observed that increasing current compliance during the set process of device decreases the resistance of device in low resistance state and set/reset voltages which was attributed to increase in diameter of conductive filament on increasing current compliance. Switching between low and high resistance states was attributed to formation and rupture these conductive filaments. By systematically varying the current compliance non-volatile and stable 4-level resistance states with sufficient margin of resistance ratios were observed which remained mostly unchanged with respect to time and switching cycles. These findings seem to be promising for futuristic multi-bit nonvolatile memory applications.

We report the synthesis and characterization of Mg doped ZnO thin films prepared by pulsed laser deposition method. From the X-ray diffraction studies it was found that the films are nearly epitaxial in nature without any phase segregation up to 25% of Mg doping. The independent measurements from UV-visible and photoluminescence studies confirmed that with increase in Mg concentration the band gap of Zn1-x-MgxO thin film increases systematically. Interestingly with increase in Mg content, the intensity of the peak related to band to band transition decreased drastically where as an opposite trend was observed for the intensity of defect related peak in the photoluminescence spectra. This has been attributed to dominant non-radiative process.

Effect of current compliance on the resistive switching characteristics of SmGdO3based resistive random access memory devices has been investigated. It was observed that increasing current compliance during the set process of device decreases the resistance of device in low resistance state and set/reset voltages which was attributed to increase in diameter of conductive filament on increasing current compliance. Switching between low and high resistance states was attributed to formation and rupture these conductive filaments. By systematically varying the current compliance non-volatile and stable 4-level resistance states with sufficient margin of resistance ratios were observed which remained mostly unchanged with respect to time and switching cycles. These findings seem to be promising for futuristic multi-bit nonvolatile memory applications.