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In this paper, we present a mathematical model for the 3D △×n memristor-LC circuit network in the fractional-order sense. First, the impedance of the fractional-order 3D circuit network is derived using matrix transform method and difference equation model. Moreover, we extend the concept of saturation time across the memristor to the circuit network and attempt to explore the relationship between the generalized saturation time and the direct voltage across the network in fractional-order sense. In addition, the effects of the time-varying characteristics of the memristor on the fractional-order 3D circuit network are studied. Also, we propose some issues remaining to be addressed in the near future for the network model. Furthermore, the impedance characteristics are specifically analyzed with theoretical analyses and numerical simulations, where many interesting phenomena are discussed. Finally, sensitivity analysis is provided to carefully investigate the effects of various input parameters on the output response of the fractional-order 3D circuit network. [ABSTRACT FROM AUTHOR]