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This study investigates the effects of ambient atmosphere on electrical characteristics of Al2O3passivated InGaZnO thin film transistors during positive bias temperature stress. Under H2O vapor environment, the Al2O3passivated device exhibited stable electrical behaviors (ΔVth< 0.5 V), while the unpassivated device showed an apparent hump effect in the transfer curves under bias stress. The hump phenomenon was attributed to the absorption of the H2O molecule which can serve as a donor to develop a conductive back channel. The experiment results suggest that Al2O3is an effective passivation layer to suppress water vapor absorption in the InGaZnO back channel.

We propose a method to fabricate a Ni nanocrystal structure by simultaneously coevaporating Ni and SiO2pellets. An 800°Crapid thermal annealing was used to enhance the Ni nanocrystals to aggregate. Transmission electron microscopy indicates that the formed Ni nanocrystals show a high density distribution of about 4.5×1012cm−2. Then, the memory device using the Ni nanocrystals as charge-trapping centers was fabricated. The Ni nanocrystal memory device has an obvious memory window under capacitance–voltage measurement. X-ray photoelectron spectroscopy confirms the memory effect results from the Ni nanocrystals embedded in the SiO2dielectric layer. Moreover, related reliability characteristics have been extracted.

In this study, distributed charge trapping centers molybdenum silicide nanodots, are demonstrated. The Mo silicide nanodots were formed in the rapid thermal annealed mixed Mo–Si layer deposited by a dual electron gun system. A significant memory effect is observed through the electrical measurements, which is attributed to the formation of Mo silicide nanodots. In addition, the memory window is large enough to be identified as logic level “0” and “1” for the application on nonvolatile memory. The manufacture processes are simple and compatible with the conventional semiconductor manufacturing processes.

The formation of germanium nanocrystals embedded in silicon-oxygen-nitride (SiON)layer acting as distributed charge storage elements is proposed in this work. A large memory window is observed due to the isolated Ge nanocrystals in the SiONgate stack layer. The Ge nanocrystals were nucleated after the high-temperature oxidation of SiGeNlayer. The nonvolatile memory device with the Ge nanocrystals embedded in SiONstack layer exhibits 4Vthreshold voltage shift under 7Vwrite operation. Also, the sequent high-temperature oxidation of the SiGeNlayer acting as the blocking oxide is proposed to enhance the performance of nonvolatile memory devices.