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The structure of biomimetic approach to converting sunlight was applied for design of composite materials. Here, hierarchical tree-like heterostructure Ag/ZnO (Ag wt%: 8.9%) arrays were fabricated by two-step electrodeposition, and it exhibited improved activity during photoelectrochemical water oxidation. The wurtzite-structured ZnO arrays prepared are the "trunk". Ag nanoclusters were selectively deposited on the top of arrays as the "leaf", which can strongly interact with visible light due to surface plasmon resonance. The inducted electromagnetic fields around Ag would efficiently propagate energy to composites by hot electrons injection. Based on morphology and crystal structure analysis, the linear sweep voltammagrams display that photocurrent increase to 0.17mA/cm2 at 1.23 VRHE, and the photo-to-hydrogen generation is 0.23%. Additionally, the amperometric I-t curves collected without voltage displayed better photocurrent response under sunlight. The kinetics of PEC process at the electrode surface was investigated by electrochemical impedance spectroscopy (EIS). The mechanism was deduced based on the energy level of ZnO and Ag. The designed plasmonic crystal system exhibited that tree-like heterostructure is favorable for improving sunlight absorption and photoeletrochemical performance. [ABSTRACT FROM AUTHOR]

Highlights: [•] Hollow MoS2 MACCs have been successfully synthesized. [•] Initial discharge capacity of 1545mAhg−1 is obtained at 100mAg−1. [•] Hollow MoS2 MACCs show enhanced cycling stability and rate capability. [•] Amorphous carbon can improve electrochemical performance. [ABSTRACT FROM AUTHOR]

Abstract: Sn4+-doped FeS2 cubes with high yield thin films have been successfully synthesized on FTO glass through a simple hydrothermal process. The Sn4+-doped FeS2 cubes are single crystalline in cubic structure with (200) facet as the main exposed surface. The formation process was investigated. Sn2+ was found to play an important role during the formation process of FeS2 growing on FTO glass. The direct optical band gap value can be estimated to be 1.71eV which is much larger than that of bulk FeS2 due to the Sn4+ doping. The photoelectrochemical properties of the Sn4+-doped FeS2 films were studied as well. There is a significant increase in photocurrent of Sn4+-doped FeS2 electrode compared to that of undoped sample. [Copyright &y& Elsevier]