103 results on '"ISHIKAWA, H."'
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2. Intersubband all-optical switching in submicron high-mesa SCH waveguide structure with wide-gap II-VI-based quantum wells
3. High-power AlGaN∕GaN dual-gate high electron mobility transistor mixers on SiC substrates
4. Super-high- athermal arrayed waveguide grating with resin-filled trenches in slab region
5. Low dark current GaN Schottky UV photodiodes using oxidised IrNi Schottky contact
6. Design optimisation of SOA-integrated DFB laser wavelength converter
7. 1.35 [micro sign]m intersubband transition in InGaAs∕AlAsSb single quantum wells
8. Large improvement in intersubband saturation intensity in InGaAs/AlAsSb quantum well
9. Low-loss arrayed-waveguide grating with high index regions at slab-to-array interface
10. GaN MESFETs on (111) Si substrate grown by MOCVD
11. Sidegating effect of GaN MESFETs grown on sapphire substrate
12. Lasing with low threshold current and high output power from columnar-shaped InAs/GaAs quantum dots
13. Polarisation-insensitive wavelength conversion and phase conjugation using bi-directional forward four-wave mixing in a lasing DFB-LD
14. High T0 (140 K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates
15. Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer
16. THz frequency conversion using nondegenerate four-wave mixing process in a lasing long-cavity λ/4-shifted DFB laser
17. Uniform and low polarisation-mode dispersion in 100 fibre ribbon slotted core optical cable
18. 160°C CW operation of InGaAs/GaAs vertical cavity surface emitting lasers
19. High transconductance selfaligned WSi gate AIInAs/GaInAs HIGFETs grown by MOCVD
20. Low-loss lead fluoride-coated square waveguides for CO2 laser light transmission
21. External grating tunable MQW laser with wide tuning range of 240 nm
22. High-power and high-speed semi-insulating BH structure monolithic electroabsorption modulator/DFB laser light source
23. Effects of zinc doping in DFB emitting at 1.3 and 1.55 μm lasers
24. Effect of varying threshold gain on second order intermodulation distortion in distributed feedback lasers
25. 1.35 4;µm intersubband transition in InGaAs/AlAsSb single quantum wells
26. Dependence of spectral linewidth on cavity length and coupling coefficient in DFB laser
27. Design of DFB lasers for high-power single-mode operation
28. W/WSi gate self-aligned HIFETs (heterointerface FETs) using an AlInAs/GaInAs heterostructure grown by MOCVD
29. Chirp behaviour of high-speed GaInAsP/InP optical intensity modulator
30. High-speed GaInAsP/InP buried-heterostructure optical intensity modulator with semi-insulating InP burying layers
31. Dependence of spectral linewidth of DFB lasers on facet reflectivity
32. 1.55μm wavelength tunable FBH-DBR laser
33. High-speed and high-power GaInAsp/InP junction field-effect transistor with submicron gate
34. Long-cavity, multiple-phase-shift, distributed feedback laser for linewidth narrowing
35. Low-threshold operation of 1.54 μm InGaAsP/InP DFB laser with second-order grating
36. Wide temperature range of stable single-mode operation in weakly coupled asymmetric mirror reflectivity DFB lasers
37. Longitudinal mode selectivity above threshold for asymmetric mirror structure DFB lasers with low front facet reflectivity
38. Tunable DBR laser with wide tuning range
39. High-transconductance AlInAs/GaInAs HIFETs grown by MOCVD
40. Analysis of the parasitic effective capacitance of buried-heterostructure lasers
41. Tunable, narrow-linewidth and high-power λ/4-shifted DFB laser
42. Linewidth reduction in DFB laser by detuning effect
43. Effect of front facet reflectivity on transmission characteristics of asymmetric reflectivity DFB lasers
44. Single-longitudinal-mode operation of DFB lasers in gain-switched operating conditions
45. Design for single-mode asymmetric quarter-wavelength-shifted DFB laser with high differential efficiency
46. InGaAsP/InP separated multiclad layer stripe geometry lasers emitting at 1.5 μm
47. High-efficiency operation of phase-adjusted DFB laser by asymmetric structure
48. V-grooved substrate buried heterostructure InGaAsP/InP laser
49. 5 Gbit/s modulation characteristics of optical intensity modulator monolithically integrated with DFB laser
50. Reduction of mode selectivity in DFB lasers with one cleaved facet by a tapered refractive-index profile
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