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Your search keyword '"J. Witters"' showing total 3 results
Start Over Author "J. Witters" Journal electronics letters
3 results on '"J. Witters"'

1. Modified spice modelling of DC characteristics for high-voltage DMOS transistors

Author

J. Witters, G Schols, A. De Bruycker, M.-J. Zhou, and A. Van Calster

Subjects
Engineering, business.industry, Transistor, Spice, Electrical engineering, High voltage, Hardware_PERFORMANCEANDRELIABILITY, Semiconductor device, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, law.invention, Computer Science::Hardware Architecture, Computer Science::Emerging Technologies, Hardware_GENERAL, law, Modulation, Hardware_INTEGRATEDCIRCUITS, Voltage source, Electrical and Electronic Engineering, business, Voltage
Abstract

An improved SPICE DC model for high-voltage DMOS transistors is proposed by considering the drift resistance modulation by both the gate and the drain voltages. A non-linear voltage controlled voltage source (VCVS) is introduced to represent this modulation. Results calculated from this model agree well with the experimental curves of the device DC characteristics

Published
1993
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2. Improved negative dynamic resistance model for high voltage MOSFETs

Author

M.-J. Zhou, A. Van Calster, J. Witters, and A. De Bruycker

Subjects
Engineering, business.industry, Negative resistance, Velocity saturation, Electrical engineering, Semiconductor device modeling, Optoelectronics, High voltage, Power semiconductor device, Field-effect transistor, Electrical and Electronic Engineering, business, Dynamic resistance
Abstract

For MOSFETs operating at moderate and higher power levels a negative dynamic resistance is observed. An electro-thermal model based on the temperature dependence of the mobility and the velocity saturation is proposed.

Published
1993
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3. Breakdown walkout and its reduction in high-voltage pLDMOS transistors on thin epitaxial layer

Author

A. Van Calster, M.-J. Zhou, G. Schols, J. Witters, and A. De Bruycker

Subjects
Materials science, business.industry, Transistor, High voltage, Epitaxy, law.invention, Ion implantation, law, Electric field, Optoelectronics, Power semiconductor device, Field-effect transistor, Electrical and Electronic Engineering, business, Layer (electronics)
Abstract

Breakdown walkout in high-voltage pLDMOS transistors on a thin epitaxial layer is observed and investigated by using ion implantation to vary the surface electric field in the drift region. Results show that the walkout is closely related to the surface field and can be reduced by determining the correct extent of ion implantation.

Published
1992
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