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A state holding circuit, similar to the Muller C-element used as a latch, a register or a counter, has been successfully fabricated using GaAs/AlGaAs heterostructures grown by molecular beam epitaxy (MBE). Using the negative resistance in a resonant tunnel diode, the circuit has a simpler configuration than the C-element and the potential for use in high speed circuits.

A pseudomorphic Ga0.2In0.8P/Ga0.47In0.53As/InP high electron mobility transistor grown by MOVPE using TBP and TBA is reported for the first time. The extrinsic transconductances of 480 and 620 mS/mm with the maximum output current of 660 and 780 mA/mm were achieved for the 1.2 µm gate length device at 300 and 77 K, respectively. These data are comparable to those of AlInAs/GaInAs HEMTs grown by MOVPE and MBE indicating the good material quality.

The first microwave large-signal power results measured from InGaP/GaAs heterostructure-emitter bipolar transistors (HEBT) are reported. A continuous wave output power of 0.25 W with power added efficiency of 63.5%, at 1.9 GHz has been achieved from a 26-finger HEBT with total emitter area of 873.6 /spl mu/m/sup 2/. The experimental results demonstrate the excellent power performance and capability of HEBTs.

A carbon doped GaInP/GaAs heterostructure-emitter bipolar transistor (HEBT) grown by MOCVD is reported with high RF performance. A cutoff frequency of 50 GHz and maximum oscillation frequency of 90 GHz were obtained for the device. An offset voltage as low as 90 mV was achieved. It is shown that the GaInP/GaAs HEBT with a high frequency and a low offset voltage is a good candidate for low battery power device applications.

A C-doped GaInP/GaAs heterojunction bipolar transistor (HBT) grown by MOCVD using TBP and TBA is demonstrated. A current gain of 60, a cutoff frequency of 59 GHz, and a maximum oscillation frequency of 68 GHz were obtained for a 5 × 15 µm2 self-aligned HBT. A minimum noise figure of 1.4–2.6 was measured in the frequency range of 2–18 GHz. The results show that TBA and TBP are suitable MOCVD sources for growing high quality HBT materials.