1. 5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing.
- Author
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Zhihua Dong, Shuxin Tan, Yong Cai, Hongwei Chen, Shenghou Liu, Jicheng Xu, Lu Xue, Guohao Yu, Yue Wang, Desheng Zhao, Keyu Hou, Chen, Kevin J., and Baoshun Zhang
- Subjects
THRESHOLD voltage ,GATE array circuits ,ELECTRON mobility ,ELECTROMAGNETIC interference ,ELECTRIC switchgear ,SILICON ,ADDITIVES - Abstract
Normally-off AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) on Si substrate were fabricated with the fluorine-based treatment technique. By employing a 20nmthick Al
2 O3 gate dielectric deposited by atomic layer deposition, the fabricated MOS-HEMT exhibits a large positive threshold voltage of + 3.5V, a maximum gate input voltage of 15V, a maximum saturate drain current of 5.3A and an off-state breakdown voltage of 402V. The high threshold voltage and the large input voltage swing is expected to improve the electromagnetic interference immunity and safety of AlGaN/GaN MOS-HEMT power switches. [ABSTRACT FROM AUTHOR]- Published
- 2013
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