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An enhanced electrostatic discharge (ESD) power clamp for an antenna switch controller with silicon‐on‐insulator (SOI) complementary metal‐oxide‐semiconductor (CMOS) technology is presented. The gate drive voltages of larger n‐type metal‐oxide‐semiconductor transistors in a stacked configuration of a RC‐triggered power clamp have been optimised to obtain larger discharging capability and shorter turn‐on time compared to the conventional topology. The proposed ESD power clamp circuits are implemented in a double‐pole five‐throw antenna switch controller and the experimental results confirm the validity of this approach. [ABSTRACT FROM AUTHOR]