1. 71% PAE C-band GaN power amplifier using harmonic tuning technology.
- Author
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Yang Lu, Mengyi Cao, Jiaxing Wei, Bochao Zhao, Xiaohua Ma, and Yue Hao
- Subjects
- *
POWER amplifiers , *TRANSISTORS , *HARMONIC analysis (Mathematics) , *MODULATION-doped field-effect transistors , *HIGH temperature electronics - Abstract
A high-efficiency C-band internally matched power amplifier, developed with 12 mm AlGaN/GaN high-electron mobility transistors is described. The second-harmonic frequency (2f0) tuning network is applied to confine the impedance at 2f0 in safe efficiency regions. The packaged power amplifier achieves 71% power-added efficiency (PAE) and 102 W output power, associated with 17 dB power gain. The PAE is believed to be the highest of the C-band GaN power amplifiers reported to date. [ABSTRACT FROM AUTHOR]
- Published
- 2014
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