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Conventionally, DC arc furnaces are fed by thyristor rectifiers to control the level of current or power transferred to the load. With the advancement of high-power transistors, other structures such as diode rectifiers and DC choppers have been introduced and developed for the feeding system of DC electric arc furnaces. In this paper, the effect of different power supply systems on power quality indexes is discussed. In this regard, two types of feeding systems are considered, including a power supply system based on thyristor rectifiers and a power supply system based on diode rectifiers and DC choppers. In addition, different control methods, including constant current control (CCC) and constant power control (CPC), on DC electric arc furnaces are applied. For evaluating the power quality indexes, voltage and current harmonic distortion, unbalance of voltage and current, and power factor on the AC side are investigated for different power supply systems. Simulation results were performed with PSCAD/EMTDC software. It is shown that the power supply systems with diode rectifiers and DC choppers have superiority in comparison to the types based on thyristor rectifiers. According to the results, the average current THD is reduced from 16.55% in the thyristor rectifier to 8.40% in the chopper rectifiers with the CCC method and from 19.27% in the thyristor rectifier to 7.38% in the chopper rectifiers with the CPC method. Moreover, the average voltage THD is reduced from 5.67% in the thyristor rectifier to 3.02% in the chopper rectifiers with the CCC method. The result is similar to the CPC method. Furthermore, for a specific power supply system, the harmonic distortion is lower in the case of the CPC method than in the CCC method. [ABSTRACT FROM AUTHOR]

This paper treats a parallel 12-pulse rectifier as the study subject. The influence of unbalanced terminal voltage, the triggering angle, as well as the commutation angle of a thyristor-controlled rectifier circuit are considered in switching functions. Then, a frequency-domain harmonic coupled admittance matrix under the effect of positive sequence and negative sequence voltages are proposed, respectively. With the integration of the above matrices, a harmonic coupled admittance matrix model of a parallel 12-pulse rectifier under unbalanced voltage is proposed. On this basis, a simplified harmonic model of a 12-pulse rectifier is established, which only considers the effect of major elements through analyzing the elements' distribution and magnitude of the harmonic coupled admittance matrix, as well as the AC current harmonic producing mechanism. All the models proposed in this paper are verified with high accuracy through simulation in MATLAB/Simulink. The models proposed in this paper can be used to guide the selection of harmonic suppression measures and equipment. [ABSTRACT FROM AUTHOR]

Different types of fault current limiters (FCLs) have been developed and designed based on non-superconducting DC reactors (NSDRs). This paper proposes a controllable dual-bridge FCL (CDBFCL) based on the NSDR for use in an AC-type micro-grid. It includes a NSDR and two series and shunt bridge circuits. The series bridge is based on diode semiconductor switches and is coupled in series with the line via a transformer. The shunt bridge is based on thyristor semiconductor switches and is coupled in parallel with the line. The shunt bridge provides a variable voltage source. It compensates for the DC side voltage drop due to NSDR resistance and semiconductor switches during normal operating condition. In addition, by controlling the shunt bridge firing angle, it produces a controllable DC voltage, which can control the fault current amplitude during a fault. The structure, principle operating work, and control system of the proposed CDBFCL are presented. The CDBFCL performance is studied analytically and through simulation by the PSCAD/EMTDC software. In addition, the simulation results are compared with those obtained experimentally from a prototype CDBFCL and show a close correlation. [ABSTRACT FROM AUTHOR]

Electronic devices can be damaged in an undesirable manner if the junction temperature achieves high values in order to cause thermal runaway and melting. This paper describes the mathematical model to calculate the power losses in power semiconductor devices used in bidirectional rectifier which supplies a resistive-inductive load. The obtained thermal model can be used to analyse the thermal behaviour of power semiconductors in steady-state conditions, at different values of the firing angle, direct current, air speed in the case of forced cooling, and different types of load. Also, the junction and case temperature of a power thyristor have been computed. In order to validate the proposed mathematical model, some experimental tests have been performed. The theoretical values are in good concordance with the experimental data and simulated results. [ABSTRACT FROM AUTHOR]