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The demand for highly efficient and dynamic electric vehicles (EVs) has increased dramatically. The traction inverter, a pivotal component in an EV powertrain, plays a crucial role. This study is dedicated to designing a traction inverter with focus on achieving high efficiency and elevated power density and mitigating electromagnetic interference (EMI) issues. To realize these objectives, autonomous gate drivers (AGDs) are proposed and designed using LTspice simulation software. The aim is to achieve zero voltage switching (ZVS) at both turn-on and turn-off through the utilization of triangular current mode (TCM) control on the gate driver. The AGDs implement a current modulation scheme by sensing the current and voltage and generating gate-source voltage signals with minimal delays. The implemented current modulation scheme by the AGDs results in an efficiency exceeding 99% for a 10 kW power rating. The sinusoidal output waveforms not only contribute to extending the motor lifespan by mitigating sharp-edge voltages but also bring advantages such as reduced switch stress, decreased EMI, and simplified thermal management. [ABSTRACT FROM AUTHOR]

An increasing share of fluctuating and intermittent renewable energy sources can cause over-currents (OCs) in the power system. The heat generated during OCs increases the junction temperature of semiconductor devices and could even lead to thermal runaway if thermal limits are reached. In order to keep the junction temperature within the thermal limit of the semiconductor, the power module structure with heat-absorbing material below the chip is investigated through COMSOL Multiphysics simulations. The upper limits of the junction temperature for Silicon (Si) and Silicon Carbide (SiC) are assumed to be 175 and 250 ∘ C, respectively. The heat-absorbing materials considered for analysis are a copper block and a copper block with phase change materials (PCMs). Two times, three times, and four times of OCs would be discussed for durations of a few hundred milliseconds and seconds. This article also discusses the thermal performance of a copper block and a copper block with PCMs. PCMs used for Si and SiC are LM108 and Lithium, respectively. It is concluded that the copper block just below the semiconductor chip would enable OC capability in Si and SiC devices and would be more convenient to manufacture as compared to the copper block with PCM. [ABSTRACT FROM AUTHOR]