1. Ferroelectric Properties of SBN Thin Films Deposited by Ion Beam Sputtering
- Author
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Jae-Hoon Jang, Hee Young Lee, Sang-Hee Cho, Jeong-Joo Kim, and Dong Gun Lee
- Subjects
Permittivity ,Materials science ,Ion beam ,Analytical chemistry ,Relative permittivity ,Strontium barium niobate ,Sputter deposition ,Coercivity ,Condensed Matter Physics ,Ferroelectricity ,Electronic, Optical and Magnetic Materials ,chemistry.chemical_compound ,chemistry ,Thin film - Abstract
Strontium barium niobate thin films with nominal composition corresponding to Sr0.30Ba0.70Nb2O6 (SBN30) were deposited onto Pt/Ti/SiO2/Si(100) substrate by ion beam sputter deposition (IBSD) technique. D–E hysteresis loops for Pt/SBN30/Pt capacitor samples were saturated after annealing treatment in air above 750°C, with remanent polarization (2Pr) value of about 22 μC/cm2 and coercive field (Ec) of about 128 kV/cm. Relative permittivity and leakage current characteristics were also determined from C–V and I–V measurements.
- Published
- 2004
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