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Transition metal dichalcogenides, because of their layered structure, are well suited for extreme pressure lubrication. These materials being semiconducting and of layered structure may undergo structural and electronic transitions under pressure. Here we report the details of the preparation and characterization of single crystals of NbTe 2 and the results of electrical resistance measurements under pressure carried out on it to investigate this possibility. Single crystals were grown by the chemical vapor transport technique, using iodine as a transporting agent. The composition of the grown crystals was confirmed on the basis of Energy Dispersive Analysis by X-ray (EDAX) and remaining structural characterization was also accomplished by X-ray Diffraction (XRD) studies. Electrical resistance was measured employing a Bridgman anvil set up to 10 GPa and diamond anvil cell (DAC) assembly up to 25 GPa. A technique slightly modified from that described in the literature for carrying out electrical resistivity measurements in the diamond anvil cell (DAC) under pressure has been standardized. [ABSTRACT FROM AUTHOR]