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The transportation industry is one of the greatest contributors to a growing carbon footprint. As the world increasingly prioritizes a greener and cleaner future, the transition from ICEs to EVS offers significant benefits as EVs are zero-emission vehicles. However, considering the production and disposal stages of EVs, they cannot be considered entirely emission-free. But in comparison to ICEs, they still have a much smaller carbon footprint. Moreover, studying EV technology is essential to bringing this to the lowest possible extent. However, these advancements come with challenges. In this review article, we have taken an in-depth look into the various challenges, namely the economic challenges, technological challenges, and environmental challenges, faced by EV technology today and the various solutions proposed by researchers, their limitations, and future potential in EV technology advancement. Within this context, we discuss the influence of governmental policies, accessibility and affordability of EVs to the masses, natural and man-made disasters, economic instability, technological limitations posed by the vehicle technology, and limitations posed by battery technology with batteries being the central element for EVs, limitations associated with the existing infrastructure and its ability to support widescale use of EVs, and environmental factors like carbon footprint, among other factors, on EVs technology and the opportunities this technology can make use of in the future. This paper discusses these concerns in detail and gives extensive insight into the challenges, solutions, and future trends pertaining to economic impacts, vehicle technology, battery technology, power grids and charging infrastructure, and environmental impact, of EVs and EV technology.

In this article, the effect of local mechanical stress on the properties of monocrystalline and polycrystalline silicon-based p-n junctions under illumination is studied and analyzed experimentally and theoretically. Results from the experiments showed that when the local mechanical force was increased from 4 N to 20 N, the short-circuit current of the monocrystalline silicon-based p-n junction changed nonlinearly from 24 mA to 43 mA, and that of the polycrystalline silicon-based p-n junction changed linearly from 14.7 mA to 16.7 mA. Experimental results shows that the ideality coefficient of the p-n junction based on monocrystalline silicon decreased from 1.274 to 0.807 and that of polycrystalline from 1.274 to 1.102. Therefore, when the mechanical force applied on monocrystalline silicon increased, the dominant recombination changed from Shockley-Read-Hall to Auger. On the other hand, in polycrystalline silicon, the dominant Shockley-Read-Hall recombination did not change due to the grain boundaries. So, it means that mechanical force causes the narrowing of the band gap of the silicon not increasing of number of recombination centers. When mechanical force increases from 4 N to 12 N, fill factor of monocrystalline increased by 5.75% and that of polycrystalline decrease by 1.1%. In the range of 4 N and 20 N mechanical force, saturation current of monocrystalline and polycrystalline silicon p-n junction changed from $8~\mu \text{A}$ to $41~\mu \text{A}$ . and $22~\mu \text{A}$ to $97~\mu \text{A}$ , respectively.