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Beeswax, a natural nontoxic biological material, is used as the gate dielectric of flexible low-voltage indium–zinc-oxide (IZO)-based homojunction thin-film transistors (TFTs) on paper substrates. A high specific capacitance of 5 \mu \textF /cm2 is measured at 1 Hz in the beeswax film due to the electric-double-layer effect. The current ON/OFF ratio, subthreshold swing, and field-effect mobility of the IZO-based TFTs on paper substrate are estimated to be 7.6\times 10 ^6 , 86 mV/decade, and 14.6 cm2 /Vs, respectively. In addition, our results demonstrate that the flexible oxide-based TFTs on paper substrate show a good stability after 3000 times bending and 30 days aging testing. Such flexible low-voltage oxide-based homojunction TFTs have potential applications in portable paper electronics. [ABSTRACT FROM PUBLISHER]

Low-voltage flexible dual-gate indium–tin–oxide-based thin-film transistors (TFTs) are self-assembled on \SiO2-covered paper substrates by one shadow mask diffraction method. Solution-processed chitosan gate dielectric films have a large gate specific capacitance (5.8 \mu\F/cm^2) due to the electric-double-layer effect. The subthreshold swing, drain-current on/off ratio, and field-effect mobility are estimated to be 80 mV/dec, \4 \times \10^6, and 9.3 \cm^2/\V\cdot\s, respectively. Low-voltage operation mechanism and threshold voltage modulation of such dual-gate paper TFTs are investigated. [ABSTRACT FROM AUTHOR]