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3. Barrier-Layer Scaling of InAlN/GaN HEMTs

Author

Medjdoub, F., primary, Alomari, M., additional, Carlin, J.-F., additional, Gonschorek, M., additional, Feltin, E., additional, Py, M.A., additional, Grandjean, N., additional, and Kohn, E., additional

Published
2008
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4. Piezoelectric GaN sensor structures

Author

Zimmermann, T., primary, Neuburger, M., additional, Benkart, P., additional, Hernandez-Guillen, F.J., additional, Pietzka, C., additional, Kunze, M., additional, Daumiller, I., additional, Dadgar, A., additional, Krost, A., additional, and Kohn, E., additional

Published
2006
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7. Current instabilities in GaN-based devices

Author

Daumiller, I., primary, Theron, D., additional, Gaquiere, C., additional, Vescan, A., additional, Dietrich, R., additional, Wieszt, A., additional, Leier, H., additional, Vetury, R., additional, Mishra, U.K., additional, Smorchkova, I.P., additional, Keller, S., additional, Nguyen, C., additional, and Kohn, E., additional

Published
2001
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17. InAlN/GaN HEMTs for Operation in the 1000 ^\circ \C Regime: A First Experiment.

Author

Maier, D., Alomari, M., Grandjean, N., Carlin, J.-F., Diforte-Poisson, M.-A., Dua, C., Delage, S., and Kohn, E.

Subjects
MODULATION-doped field-effect transistors, NITRIDES, PHYSICS experiments, LOGIC circuits, GATE array circuits, RELIABILITY in engineering, HIGH temperatures, MICROFABRICATION
Abstract

GaN-based heterostructures, and here, particularly, the lattice matched InAlN/GaN configuration, possess high chemical and thermal stability. Concentrating on refractory metal contact schemes, HEMT devices have been fabricated allowing high-temperature 1-MHz large-signal operation at 1000 ^\circ\C (in vacuum) for 25 h. Despite slow gate contact degradation, major degradation of the heterostructure could not be observed. Extrapolation of the RF characteristics suggests that operation up to gigahertz frequencies at this temperature may be feasible. [ABSTRACT FROM PUBLISHER]

Published
2012
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18. P-Channel InGaN-HFET Structure Based on Polarization Doping.

Author

Zimmerman, T., Neuburger, M., Kunze, M., Daumiller, I., Denisenko, A., Dadgar, A., Krost, A., and Kohn, E.

Subjects
MODULATION-doped field-effect transistors, GALLIUM nitride, SEMICONDUCTOR doping, HETEROSTRUCTURES, FIELD-effect transistors, ELECTRONICS
Abstract

A p-channel GaN-based heterostructure field-effect transistor (HFET) concept based on a two-dimensional hole gas (2DHG) induced by polarization doping is presented. The structure employed is a GaN-InGaN-GaN heterostructure without external acceptor doping. The p-channel 2DHG characteristics are verified by operation at low temperature (20 K) and capacitance-voltage profiling. Hall measurements result in a positive Hall-coefficient and indicate a 2DHG hole mobility of approximately 700 cm²/Vs at 66 K. For an optimum structure supported by extrinsic doping a simulated output current of approximately 100 mA/mm is predicted for a gate length of 0.5 µm. [ABSTRACT FROM AUTHOR]

Published
2004
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19. Analysis of Surface Charging Effects in Passivated AlGaN—GaN FETs Using a MOS Test Electrode.

Author

Neuburger, M., Allgaier, J., Zimmermann, T., Daumiller, I., Kunze, M., Birkhahn, R., Gotthold, D. W., and Kohn, E.

Subjects
INTEGRATED circuit passivation, MODULATION-doped field-effect transistors, FIELD-effect transistors, ELECTRODES, SURFACES (Physics), RADIO frequency
Abstract

Passivated AlGaN-GaN high electron mobility transistor (HEMT) structures are modified by adding a MOS test gate placed between gate and drain to identify surface charge phenomena by stress experiments. A new method is described to identify the vertical position of the charge centroid of charge injected from the gate. In the case investigated, this is within the passivation layer. [ABSTRACT FROM AUTHOR]

Published
2004
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