Search

Your search keyword '"Chen, Lixiang"' showing total 7 results
Start Over Author "Chen, Lixiang" Journal ieee electron device letters
7 results on '"Chen, Lixiang"'

4. High-Performance Enhancement-mode AlGaN/GaN high electron mobility transistors combined with TiN-based Source Contact Ledge and Two-Step Fluorine Treatment

Author

Yang, Ling, primary, Hou, Bin, additional, Mi, Minhan, additional, Zhu, Qing, additional, Wu, Mei, additional, Zhu, Jiejie, additional, Lu, Yang, additional, Zhang, Meng, additional, Chen, Lixiang, additional, Zhou, Xiaowei, additional, Lv, Ling, additional, Ma, Xiaohua, additional, and Hao, Yue, additional

Published
2018
Full Text
View/download PDF

6. Enhanced gmand fTWith High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge

Author

Yang, Ling, primary, Mi, Minhan, additional, Hou, Bin, additional, Zhang, Hengshuang, additional, Zhu, Jiejie, additional, Zhu, Qing, additional, Lu, Yang, additional, Zhang, Meng, additional, He, Yunlong, additional, Chen, Lixiang, additional, Zhou, Xiaowei, additional, Lv, Ling, additional, Ma, Xiaohua, additional, and Hao, Yue, additional

Published
2017
Full Text
View/download PDF

7. Enhanced gm and fT With High Johnson’s Figure-of-Merit in Thin Barrier AlGaN/GaN HEMTs by TiN-Based Source Contact Ledge.

Author

Yang, Ling, Mi, Minhan, Hou, Bin, Zhang, Hengshuang, Zhu, Jiejie, Zhu, Qing, Lu, Yang, Zhang, Meng, He, Yunlong, Chen, Lixiang, Zhou, Xiaowei, Lv, Ling, Ma, Xiaohua, and Hao, Yue

Subjects
ALUMINUM gallium nitride, BREAKDOWN voltage, MODULATION-doped field-effect transistors
Abstract

A high combination of transconductance ( \textg\text {m} ), current gain cutoff frequency ( \textf\text T ) and three terminal breakdown voltage was achieved using thin barrier AlGaN/GaN HEMTs and TiN-based source contact ledge. The sheet resistance is effectively reduced, whereas the peak extrinsic trans-conductance is improved by 24% from 334 to 415 mS/mm. The thin barrier AlGaN/GaN HEMTs with TiN-based source ledge exhibit a maximum drain current of 1096 mA/mm, a three-terminal off-state breakdown voltage (BV \textsf {DS} ) of 151 V, a high current-gain cutoff frequency \textf\text T of 69 GHz, and a high power-gain cutoff frequency \textf\text {MAX} of 110 GHz. No significant drain current collapse was observed on thin barrier AlGaN/GaN HEMTs with TiN-based source contact ledge. The uniform \textf\text T characteristic over a wide range of bias condition is achieved by using the TiN-based source contact ledge devices. The calculated Johnson’s figures of merit (J-FOM = BV \textsf {GD}\times \text{f}\text T ) is 10.4 THz-V, which is the highest record so far for 0.2\mu \textm T-gate SiN passivation AlGaN/GaN HEMTs without source field plate. [ABSTRACT FROM AUTHOR]

Published
2017
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results