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Your search keyword '"Jia, Zhitai"' showing total 10 results
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10 results on '"Jia, Zhitai"'

4. Double-Barrier β-Ga2O3 Schottky Barrier Diode With Low Turn-on Voltage and Leakage Current

Author

Xiong, Wenhao, primary, Zhou, Xuanze, additional, Xu, Guangwei, additional, He, Qiming, additional, Jian, Guangzhong, additional, Chen, Chen, additional, Yu, Yangtong, additional, Hao, Weibing, additional, Xiang, Xueqiang, additional, Zhao, Xiaolong, additional, Mu, Wenxiang, additional, Jia, Zhitai, additional, Tao, Xutang, additional, and Long, Shibing, additional

Published
2021
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6. Enhancement-Mode Ga 2 O 3 FET With High Mobility Using p-Type SnO Heterojunction.

Author

Wang, Xunxun, Yan, Shiqi, Mu, Wenxiang, Jia, Zhitai, Zhang, Jiawei, Xin, Qian, Tao, Xutang, and Song, Aimin

Subjects
INDIUM gallium zinc oxide, P-N heterojunctions, NANOSTRUCTURED materials, HETEROJUNCTIONS, THRESHOLD voltage, ELECTRON mobility, CHARGE carrier mobility
Abstract

Mechanically exfoliated gallium oxide (Ga2O3) nano sheets based filed-effect-transistors (FETs) with Al2O3/Ga2O3, indium gallium zinc oxide (IGZO)/Ga2O3 n-n, and SnO/Ga2O3 p-n heterojunctions in the back-channel were fabricated. In contrast to that Al2O3/Ga2O3 heterojunction induces negative threshold voltage (${V} _{\text {TH}}$) shift, both IGZO/Ga2O3 n-n and SnO/Ga2O3 p-n heterojunctions shift ${V} _{\text {TH}}$ positively. The Ga2O3 FET with 12 nm p-type SnO realizes enhanced-mode operation with ${V} _{\text {TH}}$ of 5.3 V by significantly shifting ${V} _{\text {TH}}$ of 40.3 V, high on current density of 14.1mA/mm, and high electron mobility of 191 cm2V−1s−1, which is, to the best of our knowledge, the highest among the reported Ga2O3 FETs measured at room temperature. [ABSTRACT FROM AUTHOR]

Published
2022
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7. High-Performance β -Ga 2 O 3 Solar-Blind Photodetector With Extremely Low Working Voltage.

Author

Chen, Chen, Zhao, Xiaolong, Hou, Xiaohu, Yu, Shunjie, Chen, Rui, Zhou, Xuanze, Tan, Pengju, Liu, Qi, Mu, Wenxiang, Jia, Zhitai, Xu, Guangwei, Tao, Xutang, and Long, Shibing

Subjects
PHOTODETECTORS, LOW voltage systems, NANOELECTROMECHANICAL systems, LOGIC circuits, DETECTORS, SPEED of light
Abstract

The Ga2O3 solar-blind photodetectors (SBPDs) face the tradeoff between power consumption ($P_{\text {C}}$) and photoresponse performance. Here, an ultrasensitive two-terminal photodetector based on $\boldsymbol {\beta }$ -Ga2O3 microflake with extremely-low working voltage and ${P}_{\text {C}}$ was achieved. At a working voltage of 2 V and ${P}_{\text {C}}$ of 10 fW, the Ga2O3 SBPD exhibits superexcellent photodetection performance, including a responsivity (${R}$) of ${2.3}\,\,\times \,\,{10}^{{5}}\text{A}$ /W, a detectivity (${D}^{ \boldsymbol {\ast }}$) of ${3.5}\,\,\times \,\,{10}^{{18}}$ Jones, a photo-to-dark-current ratio (PDCR) of ${3.2}\,\,\times \,\,{10}^{{8}}$ , and an ultra-low dark current (${I}_{\text {dark}}$) of 5 fA. Strikingly, the device keeps satisfactory performance at ultralow working voltage of 0.01 V, including a ${P}_{\text {C}}$ of 0.05 fW, a ${R}$ of ${2.4}\,\,\times \,\,{10}^{{3}}$ A/W, a ${D}^{ \boldsymbol {\ast }}$ of ${5.6}\,\,\times \,\,{10}^{{16}}$ Jones, and a PDCR of ${3.4}\,\,\times \,\,{10}^{{6}}$. The superior solar-blind sensitivity makes it the most excellent Ga2O3 detector towards high-performance and low- $P_{\text {C}}$ SBPD applications. [ABSTRACT FROM AUTHOR]

Published
2021
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10. Schottky Barrier Rectifier Based on (100) $\beta$ -Ga2O3 and its DC and AC Characteristics

Author

He, Qiming, primary, Mu, Wenxiang, additional, Fu, Bo, additional, Jia, Zhitai, additional, Long, Shibing, additional, Yu, Zhaoan, additional, Yao, Zhihong, additional, Wang, Wei, additional, Dong, Hang, additional, Qin, Yuan, additional, Jian, Guangzhong, additional, Zhang, Ying, additional, Xue, Huiwen, additional, Lv, Hangbing, additional, Liu, Qi, additional, Tang, Minghua, additional, Tao, Xutang, additional, and Liu, Ming, additional

Published
2018
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