8 results on '"Tae Sung Jung"'
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2. A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAM.
3. Performance characteristics of SOI DRAM for low-power application.
4. An 8-bit-resolution, 360-μs write time nonvolatile analog memory based on differentially balanced constant-tunneling-current scheme (DBCS).
5. A 64-Mbit, 640-MByte/s bidirectional data strobed, double-data-rate SDRAM with a 40-mW DLL for a 256-MByte memory system.
6. A 120-mm2 64-Mb NAND flash memory achieving 180 ns/Byte effective program speed.
7. A 3.3-V single power supply 16-Mb nonvolatile virtual DRAM using a NAND flash memory technology.
8. A 117-mm2 3.3-V only 128-Mb multilevel NAND flash memory for mass storage applications.
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