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Photonic Integrated Circuits (PICs) on indium phosphide have matured significantly over the past couple of decades and have found use in many system applications. Some PIC efforts on other group III-V substrates have also been initiated. In numerous cases, the usefulness of these PICs is because of the reduction in size, weight, and power they provide, but in many cases also because of the higher performance made possible by the improved relative phase stability among optical paths as well as the reduction of inter-element coupling losses. In this paper, as part of this special issue in tribute to Prof. Daniel Dapkus, we focus on monolithic PICs that provide a system function, especially those that incorporate and build on widely-tunable laser technology as a key element. Some of the early widely-tunable laser work is reviewed, and a selection of past system-on-a-chip developments is presented as background. Then, more recent system-on-a-chip advances performed by the author’s groups are reviewed in more detail. Key advances are highlighted. [ABSTRACT FROM AUTHOR]

Integrated photonics has been pursued on a large variety of materials and platforms over more than half a century. In recent decades, silicon has emerged as the preferred optical and substrate material. However, since many optical functionalities cannot be, inherently or conveniently, implemented on silicon-based devices, heterogeneous integration of other materials has been an inevitable constituent of silicon photonics from its inception. This paper reviews recent progress in the heterogeneous integration of dielectrics and compound semiconductors as the core optical material for ultracompact nonlinear integrated photonics, preferably on silicon substrates. Occasionally, important devices on native substrates of the core nonlinear material are also reviewed. The focus is on ultracompact photonic devices and circuits formed on submicron films of lithium niobate (LiNbO3), and the aluminium-gallium-arsenide (AlGaAs) and aluminium-gallium-nitride (AlGaN) families for second-order nonlinear processes, such as second-harmonic generation, and techniques to address phase-matching in them. Integration of second- and third-order nonlinear devices on the same chip appears to be a future trend, thus the related preliminary results are reviewed. A broader introduction to heterogeneously integrated photonics, shortcomings of conventional silicon photonics for application in nonlinear optics, as well as an overview of modeling second-order nonlinear integrated-waveguide devices are also provided for completeness. [ABSTRACT FROM AUTHOR]

This paper reviews progress in the field of heterogeneously integrated photodiodes with a focus on InP-based high-speed high-power modified uni-traveling carrier photodiodes on silicon-on-insulator waveguides. Discrete, balanced, and photodiode arrays are described. [ABSTRACT FROM PUBLISHER]

In this paper, we review our work on III–V/SOI photonic integrated circuits for short-wave infrared applications. We focus on the integration of short-wave infrared photodetectors on a silicon photonics platform and on the generation of a short-wave infrared supercontinuum using the \chi^(3) nonlinearity in silicon photonic wires. In addition, the performance of a silicon optical parametric amplifier is reviewed, as a first step towards constructing an integrated tunable short-wave infrared parametric oscillator. [ABSTRACT FROM PUBLISHER]

Integrated nonlinear optical devices for the generation of twin photon beams are expected to be a key element for the development of quantum information techniques. This paper presents a quantum theory analysis of counterpropagating twin photon generation (CPTPG) by spontaneous parametric downconversion. Full descriptions of the quantum states of the twin photon beams having unique features are obtained in the Heisenberg and Schrödinger pictures. Mathematical expressions useful for device design and quantitative prediction of the performances, such as efficiency, wavelength spectrum and bandwidth, and photon correlation time, are deduced. Numerical data are given for specific quasi-phase-matched LiNbO\bf 3 waveguide CPTPG devices. [ABSTRACT FROM PUBLISHER]

In general, an accurate evaluation of the bending loss of an optical fiber with an arbitrary refractive index profile is a cumbersome task, especially for holey fibers (HFs). In this paper, various approaches are applied and compared for the bending loss evaluations of single-polarization elliptical-hole core circular-hole HFs (EC-CHFs), which are circular-hole HFs having a core with an elliptical-hole lattice structure. Our simulation results showthat when bending loss formulas for weakly guiding circular fibers are applied to a HF by regarding it as an approximate circular fiber having an equivalent step-index (SI) profile, the definition of the core region is the most crucial issue. Moreover, we also show that the results obtained by the approximate approach based on the bending loss formulas for the equivalent SI circular fiber are in good agreement with direct approaches with numerical simulations for the real EC-CHF structure, if the equivalent core radius is suitably defined for the real cross section. [ABSTRACT FROM AUTHOR]