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4. Dislocation Evolvement in Metamorphic In 0.83 Ga 0.17 As/InP Photodetectors Through Ex-Situ Rapid Thermal Annealing.

7. Corrections to “Surface Leakage Behaviors of 2.6 μm In0.83Ga0.17As Photodetectors as a Function of Mesa Etching Depth” [Apr 20 doi: 10.1109/JQE.2020.2970745]

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