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Your search keyword '"Chevalier, Pascal"' showing total 11 results
Start Over Author "Chevalier, Pascal" Journal ieee journal of solid-state circuits
11 results on '"Chevalier, Pascal"'

4. Design of a Dual W- and D-Band PLL

Author

Shahramian, Shahriar, primary, Hart, Adam, additional, Tomkins, Alexander, additional, Chan Carusone, Anthony, additional, Garcia, Patrice, additional, Chevalier, Pascal, additional, and Voinigescu, Sorin P., additional

Published
2011
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6. 0.13 $\mu$m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications

Author

Avenier, GrÉgory, primary, Diop, Malick, additional, Chevalier, Pascal, additional, Troillard, Germaine, additional, Loubet, Nicolas, additional, Bouvier, Julien, additional, Depoyan, Linda, additional, Derrier, Nicolas, additional, Buczko, Michel, additional, Leyris, CÉdric, additional, Boret, Samuel, additional, Montusclat, SÉbastien, additional, Margain, Alain, additional, Pruvost, SÉbastien, additional, Nicolson, Sean T., additional, Yau, Kenneth H. K., additional, Revil, Nathalie, additional, Gloria, Daniel, additional, Dutartre, Didier, additional, Voinigescu, Sorin P., additional, and Chantre, Alain, additional

Published
2009
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9. Design and Scaling of W-Band SiGe BiCMOS VCOs

Author

Nicolson, Sean T., primary, Yau, Kenneth H. K., additional, Chevalier, Pascal, additional, Chantre, Alain, additional, Sautreuil, Bernard, additional, Tang, Keith W., additional, and Voinigescu, Sorin P., additional

Published
2007
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10. 0.13 μm SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications.

Author

Avenier, Grégory, Diop, Malick, Chevalier, Pascal, Troillard, Germaine, Loubet, Nicolas, Bouvier, Julien, Depoyan, Linda, Derrier, Nicolas, Buczko, Michel, Leyris, Cédric, Boret, Samuel, Montusclat, Sébastien, Margain, Alain, Pruvost, Sébastien, Nicolson, Sean T., Yau, Kenneth H. K., Revil, Nathalie, Gloria, Daniel, Dutartre, Didier, and Voinigescu, Sorin P.

Subjects
INTEGRATED circuits, COMPLEMENTARY metal oxide semiconductors, MILLIMETER waves, ELECTRIC potential, ELECTRIC lines, ELECTRIC inductors, CAPACITORS, BIPOLAR transistors
Abstract

This paper presents a complete 9.13μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2 fF/μm² high-linearity MIM capacitor and complementary double gate oxide MOS transistors. Details are given on HBT integration, reliability and models as well as on back-end devices models. [ABSTRACT FROM AUTHOR]

Published
2009
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11. 230-GHz Self-Aligned SiGeC HBT for Optical and Millimeter-Wave Applications.

Author

Chevalier, Pascal, Fellous, Cyril, Rubaldo, Laurent, Pourchon, Franck, Pruvost, Sébastien, Beerkens, Rudy, Saguin, Fabienne, Zerounian, Nicolas, Barbalat, Benoît, Lepilliet, Sylvie, Dutartre, Didier, Céli, Didier, Telliez, Isabelle, Gloria, Daniel, Aniel, Frédéric, Danneville, François, and Chantre, Alain

Subjects
BIPOLAR transistors, TRANSISTORS, BIPOLAR integrated circuits, ELECTRONICS, SOLID state electronics, ELECTRIC circuits, ELECTRONIC circuits
Abstract

This paper describes a 230-GHz self-aligned SiGeC heterojunction bipolar transistor developed for a 90.nm BiCMOS technology. The technical choices such as the selective epitaxial growth of the base and the use of an arsenic-doped monocrystalline emitter are presented and discussed with respect to BiCMOS performance objectives and integration constraints. DC and high-frequency device performances at room and cryogenic temperatures are given. HICUM model agreement with the measurements is also discussed. Finally, building blocks with state-of-the-art performances for a CMOS compatible technology are presented: A ring oscillator with a minimum stage delay of 4.4 ps and a 40-GHz low-noise amplifier with a noise figure of 3.9 dB and an associated gain of 9.2 dB were fabricated. [ABSTRACT FROM AUTHOR]

Published
2005
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