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A 5.0 G-pixel/s readout circuit for 15.3 mm $\times$ 8.6 mm optical size, 3.7 M-pixel, 1300 fps, and digital output image sensor for industrial applications is presented. With the column parallel ADC, the speed bottleneck is the vertical analog readout. To achieve a 5.0 G-pixel/s readout rate, a high speed column readout circuit is introduced. The novel pixel readout with the slew-enhancement and the time-interleaved correlated double sampling circuit is introduced to increase the readout rate. Besides, the A/D converter with the delay-and-gray code counter and the distributed digital data transfer schemes are innovated in order to reduce the noise interference to the foreground analog signal settling. The 1 horizontal (1H) readout time is 1.0 $\mu$ s.

A charge-recycling circuit and system that reuses the energy between two or more stacked CPUs is proposed in order to double the life of a battery. In this architecture, CPUs are divided into upper and lower load groups, and electrical charges are shared among the stacked CPUs and a tank capacitor. Charges are temporarily stored in the tank capacitor and are then reused. To control divided loads, a high-speed and energy-efficient regulator is needed. Internal circuit voltage variation between the upper and lower modules is determined by seven low-drop-out (LDO) regulators, a voltage-boosting capacitor circuit, and the tank capacitor. As a result, stable voltage can be supplied to each CPU, even if the upper and lower loads are different or a battery is being used. The LDOs improve the margin of collection in the tank capacitor or task schedule operation, and power efficiency is raised even further. The circuit can be implemented on silicon without a large external control circuit and inductor such as a switching regulator. This circuit was applied to an in-vehicle lock-step system because the upper and lower loads and tasks are the same. Additionally, by using the proposed task scheduling to maximize efficiency, this circuit can be applied not only to lock-step systems but also to general systems. Test chips were fabricated using 90-nm standard CMOS technology. Although the maximum power efficiency of a conventional circuit with a simple LDO is 44.4%, efficiency of the proposed charge-recycling circuit turned out to be as high as 87.1% with the test chips.

Several high-density SOI memory technologies utilizing the body floating effects have been proposed. Conditions needed for SoC memory IPs for many kinds of applications are not only performance but also suitability for platform technologies. We had reported TTRAM (Twin Transistor RAM) and (Enhanced TTRAM) which are high-density capacitorless SOI-CMOS compatible memory IPs. A platform design methodology becomes the mainstream, providing QTAT and low-cost design. Now, we have upgraded the with application-required functions called scalable TTRAM. This memory IP can be applied to many kinds of applications using the verify control technique with compact actively body-bias controlled (ABC) sense amplifier, and the unique test mode functions have also been proposed for practical usage. The test chip of 4 Mbit macro fabricated with 90 nm standard SOI CMOS achieves performance of 263 MHz high-speed random access, 79 mW/4 Mb lower active power dissipation, 453 MHz data transfer of page/burst mode and lower stand-by current mode of 5 s data retention time. The scalable TTRAM can play the role of on-chip SoC memory IPs, for example, in consumer, mobile, and MPU/game applications.

A twin-transistor random access memory (TTRAM) can provide high speed, low power and high density with CMOS compatible SOI process. However it is difficult to handle as the unified memory required for advanced SoC because it needs the simple control sensing operation for memory compiler, higher cell efficiency, and lower voltage operation for dynamic frequency and voltage control. Enhanced TTRAM (ET2RAM) applies the actively body-bias control technique to realize the low voltage array operation, and never require the negative voltage source. The ET2RAM can realize both 263 MHz at 0.8 V and 10.2 mW at 0.5 V random-cycle operation, higher cell efficiency, and process scalability. It also provides the simple control method suitable for the unified macro for system-level power management SoC with keeping the merits of TTRAM as CMOS compatibility

A 16 Mb embedded DRAM macro in a fully CMOS logic compatible 90 nm process with a low noise core architecture and a high-accuracy post-fabrication tuning scheme has been developed. Based on the proposed techniques, 61% improvement of the sensing accuracy is realized. Even with the smallest 5 fF/cell capacitance, a 322 MHz random-cycle access while 32 ms data retention time which contributes to save the data retention power down to 60 /spl mu/W are achieved.

This paper describes a 4.5-Mb dynamic ternary CAM (DTCAM) which is suitable for networking applications. A dynamic TCAM cell structure in 130-nm embedded DRAM technology is used to realize the small cell size of 3.59 /spl mu/m/sup 2/. In addition, a novel array architecture of TCAM, the pipelined hierarchical searching (PHS) architecture, is proposed. The PHS architecture is found to be suitable for realizing small area penalty, high-throughput searching and low-voltage operation simultaneously. With the combination of the DTCAM cell and the PHS architecture, small silicon area of 32 mm/sup 2/ for a fabricated 4.5-Mb DTCAM chip, high performance of 143 M searches per second and low power dissipation of 1.1 W have been achieved. To improve the yield of TCAMs, a novel shift redundancy technique is applied and estimated to result in 3.6-times yield improvement. These techniques and architectures described in this report are attractive for realizing cost-efficient, large-scale, high-performance TCAM chips.

An embedded DRAM macro with a self-adjustable timing control (STC) scheme, a negative edge transmission scheme (NET), and a power-down data retention (PDDR) mode is developed. A 13.98-mm/sup 2/ 16-Mb embedded DRAM macro is fabricated in 0.13 /spl mu/m logic-based embedded DRAM process. Co-salicide word lines and MIM capacitors are used for high-speed array operation. The delay timing variation of 36 % for an RC delay can be reduced to 3.8% by using the STC scheme. The NET scheme transfers array control signals to local array blocks with high accuracy. Thereby, the test chip achieves 1.2-V 312-MHz random cycle operation even in the low-power process. 73-/spl mu/W data retention power is realized by using the PDDR mode, which is 5% of conventional schemes.

This paper describes a silicon on insulator (SOI) DRAM which has a body bias controlling technique for high-speed circuit operation and a new type of redundancy for low standby power operation, aimed at high yield. The body bias controlling technique contributes to super-body synchronous sensing and body-bias controlled logic. The super-body synchronous sensing achieves 3.0 ns faster sensing than body synchronous sensing and the body-bias controlled logic realizes 8.0 ns faster peripheral logic operation compared with a conventional logic scheme, at 1.5 V in a 4 Gb-level SOI DRAM. The body-bias controlled logic also realizes a body-bias change current reduction of 1/20, compared with a bulk well-structure. A new type of redundancy that overcomes the standby current failure resulting from a wordline-bitline short is also discussed in respect of yield and area penalty.