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The measurement of distance plays an integral part in many aspects of modern societies. In this paper an integrated mode-locked laser on a chip is used for distance measurement based on mode-resolved interferometry. The emission from the on-chip source with a repetition rate of 2.5 GHz and a spectral bandwidth of 3 nm is coupled into a Michelson interferometer. The interferometer output is recorded as a spectral interferogram, which is captured in a single camera image. The images are analyzed using Hilbert transform to extract the distance. The distance derived shows a deviation of 6 \mum from the reference, for a distance up to 25 mm. We also demonstrate interferometry with repetition frequency sweep which can also be used with the source. Performance is expected to be better in the near future with the rapid developments in the field of on-chip laser sources which are demonstrating larger spectral widths and coherence lengths.

We report a novel type of monolithically integrated tunable semiconductor laser. The tuning is achieved by three intracavity Mach–Zehnder interferometers, realized in passive waveguides and using voltage-controlled electro-optic phase modulators requiring only four control voltages. The potential of the design is demonstrated by a realized laser system that shows an optical linewidth of 363 kHz, output power of 3 mW, and a record tuning range of 74.3 nm. Such a continuous wavelength span is in excess of any monolithic semiconductor laser reported up to date. Precision of the tuning mechanism is demonstrated by a scan over a 0.89-GHz-wide absorption line of acetylene. The laser design is suitable for a number of applications, including gas spectroscopy, telecommunication, and optical coherence tomography. The laser has been fabricated in a multi-project wafer run on an indium phosphide-based generic photonic foundry platform and demonstrates the potential of these technology platforms.

The authors present the design and characterization of a novel integrated two-section discrete mode index patterned diode laser source. The two slotted regions etched into the laser ridge waveguide are formed in the same fabrication step as the ridge, thus avoiding the requirement for complex lithography and regrowth steps. The laser is encased in a temperature-controlled butterfly package, which simplifies the static and dynamic measurements. Initial static characterization of this two-section laser shows that the injection, from the master laser to the slave laser, enhances the slave's emission side-mode suppression ratio from 30 dB to over 50 dB and its relative intensity noise is reduced from about -129.3 dB/Hz to -142.6 dB/Hz. Subsequent dynamic characterization then shows that the modulation bandwidth of the laser can be improved via injection to about three times the inherent free-running bandwidth. Hence, optical injection from master section into slave section enables the improvement of various parameters, which makes this two-section device attractive as a transmitter in optical communication systems.

The authors demonstrate the generation of a highly coherent multicarrier signal that consists of eight clearly resolved 10.7-GHz coherent sidebands generated within 3 dB of the spectral envelope peak and with an extinction ratio in excess of 45 dB by gain switching a discrete mode (DM) laser. The generated spectral comb displays a corresponding picosecond pulse train at a repetition rate of 10.7 GHz with a pulse duration of 24 ps and a temporal jitter of ~450 fs. The optical spectra and associated pulses of the gain-switched DM laser are subsequently compared with a gain-switched distributed feedback (DFB) laser that generates a spectrum with no discernible sidebands and corresponding pulses with ~3 ps of temporal jitter. By means of external injection, the temporal jitter of the gain-switched DFB laser is then reduced to