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Your search keyword '"S., Sudo"' showing total 9 results
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9 results on '"S., Sudo"'

1. Small-frequency-difference stabilization of laser diodes using /sup 12/C/sub 2/H/sub 2/ and /sup 13/C/sub 2/H/sub 2/ absorption lines for transmitter and local oscillator of optical heterodyne systems

Author

Sakai Yoshihisa, F. Kano, and S. Sudo

Subjects
Materials science, Absorption spectroscopy, business.industry, Local oscillator, Distributed Bragg reflector, Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, Wavelength, Optics, Distributed Bragg reflector laser, law, Optoelectronics, Electrical and Electronic Engineering, business, Tunable laser, Diode
Abstract

Small-frequency-difference stabilization of distributed Bragg reflector (DBR) laser diodes has been demonstrated for the first time by using vibrational-rotational absorption of /sup 12/C/sub 2/H/sub 2/ and /sup 13/C/sub 2/H/sub 2/ molecules. Frequency stabilization of two DBR laser diodes has been carried out at a wavelength of about 1.536 mu m. The frequency difference between the two stabilized lasers was evaluated to be 9 GHz by the beat spectrum measurement. The experimental results suggest that such a pair of frequency-stabilized laser diodes with a small frequency difference could be used as the transmitter and local oscillator of optical heterodyne systems. >

Published
1990

2. Frequency stabilized laser diode locked to acetylene gas absorption lines using fiber-pigtail-type acoustic optical modulator

Author

G. Kano, Sakai Yoshihisa, S. Sudo, and I. Yokohama

Subjects
Distributed feedback laser, Materials science, Tunable diode laser absorption spectroscopy, Laser diode, business.industry, Far-infrared laser, Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, Vertical-cavity surface-emitting laser, Optics, law, Fiber laser, Optoelectronics, Laser power scaling, Electrical and Electronic Engineering, business
Abstract

The operation frequency of 1.5 mu m laser diodes can be stabilized to /sup 12/C/sub 2/H/sub 2/ and /sup 13/C/sub 2/H/sub 2/ gas absorption lines without dithering the frequency spectrum of the laser diodes. The scheme employs a fiber-pigtail-type acoustic optical modulator for the purpose of a small laser-frequency scanning. Frequency stability within 3 MHz peak-to-peak fluctuation is achieved without dithering the frequency of the laser diodes. >

Published
1992

3. Frequency stabilization of laser diode using a frequency-locked ring resonator to acetylene gas absorption lines

Author

S. Sudo, Itaru Yokohama, T. Kominato, and Sakai Yoshihisa

Subjects
Distributed feedback laser, Materials science, Laser diode, Absorption spectroscopy, business.industry, Optical communication, Laser, Ring (chemistry), Atomic and Molecular Physics, and Optics, Frequency-division multiplexing, Electronic, Optical and Magnetic Materials, law.invention, Wavelength, Resonator, Optics, Planar, Path length, law, Optical cavity, Electrical and Electronic Engineering, business, Diode
Abstract

The frequency stabilization of a 1.5 mu m distributed-feedback (DFB) laser diode using a planar lightwave circuit (PLC) ring resonator whose resonant frequency is locked to /sup 12/C/sub 2/H/sub 2/ and /sup 13/C/sub 2/H/sub 2/ gas absorption lines is described. The resonant frequency of PLC ring resonator was stabilized within a 5 MHz peak-to-peak fluctuation. With this ring resonator the outer frequency fluctuation of the DFB laser diode was stabilized within 10 MHz at every resonant frequency at 5 GHz intervals. The stability demonstrated is as good as the method using molecular absorption lines as a reference. The stabilized frequency can be selected at any point on the optical resonant peaks of the optical resonator. >

Published
1991

4. 10-Gb/s 23-km penalty-free operation of 1310-nm uncooled EML with semi-insulating BH structure.

Author

K. Yashiki, T. Kato, H. Chida, K. Tsuruoka, R. Kobayashi, S. Sudo, K. Sato, and K. Kudo

Abstract

We have developed a 1310-nm uncooled electroabsorption modulator integrated light source (EML) with an AlGaInAs multiple quantum well (MQW) active/absorption stripe, which was simultaneously grown using the narrow-stripe selective MOVPE technique and was buried with an Fe-doped InP. The Al-content MQW oxidation was effectively inhibited by using the same technique. An experiment-based evaluation of the device's performance revealed that by only changing the modulation bias voltage linearly with temperature, it was possible to achieve 10-Gb/s penalty-free operation at up to 85°C over a 23-km single-mode fiber. [ABSTRACT FROM PUBLISHER]

Published
2006
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5. Full C-band external cavity wavelength tunable laser using a liquid-Crystal-based tunable mirror.

Author

J. De Merlier, K. Mizutani, S. Sudo, K. Naniwae, Y. Furushima, S. Sato, K. Sato, and K. Kudo

Abstract

A compact full C-band external cavity wavelength tunable laser is proposed. The cavity contains a fixed etalon and makes use of a liquid-crystal-based tunable mirror. The measurement results show a tuning range of 35 nm with fiber coupled power of more than 15 dBm. The sidemode suppression ratio is higher than 50 dB over the whole range and the relative intensity noise is below -148 dB/Hz. The linewidth is in worst case 700 kHz. [ABSTRACT FROM PUBLISHER]

Published
2005
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6. Wavelength-selectable light sources fabricated using advanced microarray-selective epitaxy.

Author

K. Yashiki, K. Sato, T. Morimoto, S. Sudo, K. Naniwae, Satoshi Ae, K. Shiba, N. Suzuki, T. Sasaki, and K. Kudo

Abstract

An advanced microarray-selective epitaxy with wider open-stripes has been developed for simple fabrication of distributed-feedback laser diode array-based high-power wavelength-selectable light sources. More than 40-mW fiber-coupled power and 50-dB sidemode suppression ratio over 9.2-nm wavelength were achieved. [ABSTRACT FROM PUBLISHER]

Published
2004
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7. Wavelength-selectable microarray light sources for S-, C-, and L-band WDM systems.

Author

H. Hatakeyama, K. Naniwae, K. Kudo, N. Suzuki, S. Sudo, S. Ae, Y. Muroya, K. Yashiki, K. Satoh, T. Morimoto, K. Mori, and T. Sasaki

Abstract

We report on the first demonstrated near-complete coverage of the S-, C-, and L-bands using six different ranges of wavelength-selectable microarray light sources (WSLs) based on a distributed-feedback (DFB) laser diode (LD) array. The six devices were fabricated on only two wafers. Each device has a tuning range of more than 15 nm, a sidemode suppression ratio of over 40 dB, and a fiber-coupled power greater than around 10 mW. [ABSTRACT FROM PUBLISHER]

Published
2003
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8. Frequency stabilization of 1.55 mu m DFB laser diode using vibrational-rotational absorption of /sup 13/C/sub 2/H/sub 2/ molecules

Author

H. Yasaki, Sakai Yoshihisa, T. Ikegami, and S. Sudo

Subjects
Distributed feedback laser, Materials science, Absorption spectroscopy, business.industry, Analytical chemistry, Optical communication, Beat (acoustics), Laser, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, Wavelength, law, Spectral width, Optoelectronics, Electrical and Electronic Engineering, business, Diode
Abstract

The vibrational-rotational absorption of /sup 13/C/sub 2/H/sub 2/ molecules (VRAMs) in the 1.52-1.55 mu m region was investigated in detail. On the basis of this investigation, frequency stabilization of 1.55- mu m distributed-feedback (DFB) laser diodes was demonstrated. Frequency stability to within 2 MHz peak/peak fluctuation was achieved at the 1.54949- mu m wavelength. In addition, frequency stabilizations in the wavelength regions of 1.53 mu m and 1.54 mu m were also carried out by using the strong absorption lines of /sup 13/C/sub 2/H/sub 2/ VRAM in these wavelength regions. The spectral width of the frequency-stabilized DFB laser diode was found to be 25 MHz. The absolute frequency was found to be stabilized at least to within 25 MHz by the measurement of beat spectrum. >

Published
1989

9. Pulse energy gain saturation in subpico- and picosecond pulse amplification by a traveling-wave semiconductor laser amplifier

Author

Takaaki Mukai, Y. Noguchi, H. Itoh, Tadashi Saitoh, and S. Sudo

Subjects
Femtosecond pulse shaping, Materials science, business.industry, Pulse duration, Q-switching, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Semiconductor laser theory, Optics, Multiphoton intrapulse interference phase scan, Ultrafast laser spectroscopy, Optoelectronics, Electrical and Electronic Engineering, business, Ultrashort pulse, Bandwidth-limited pulse
Abstract

Optical pulses with durations ranging from 0.49 to 21 ps are amplified by a traveling-wave semiconductor laser amplifier. The pulse energy gain is determined by pulse energy only. The dependence of pulse energy gain on output pulse energy does not change in the pulse duration range. The saturation characteristics are successfully explained by a four-level system model. >

Published
1989

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