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Low-excess-loss arrayed waveguide gratings are enabled by unique application of deep UV lithography in InP integrated photonics through reduced feature sizes and, more specifically, well-resolved inter-waveguide gap dimensions. Submicrometer wafer-flatness is shown to be required to achieve the critical dimension uniformity better than 10 nm on 3-in substrates. Arrayed waveguide grating devices were fabricated and the effect of inter-waveguide gap scaling on the excess losses was measured and compared to simulations. Excess losses down to 0.15 dB were demonstrated to be lower than predicted with the 2-D simulations. The tapering of the etch depth inside the gaps due to the lag effect of the etch process may explain the improvements.

Experimental and simulation work, presented in this letter, demonstrates for the first time how the monolithic integration of two single-mode lasers in a master-slave configuration, can substantially increase the achievable bit rate of a direct modulation adaptively modulated optical orthogonal frequency-division multiplexing (AMO-OFDM) system. The Levin-Campello algorithm is applied to select the OFDM bit and power loading scheme used for each system configuration. Improvement in terms of data throughput due to injection is measured for several transmission distances with the improvement in performance presented in terms of error vector magnitude per OFDM subcarrier.

Wavelength tunability of an all-optical clock recovery operation based on a quantum-dash mode-locked Fabry-Perot laser diode is experimentally investigated. Synchronization of the device to the injection of 40-Gb/s nonreturn-to-zero (NRZ) incoming data is assessed by analyzing both the carrier-to-noise ratio and the linewidth of the 40-GHz beat-tones measured at the mode-locked laser output. Under optical injection, beat-tone linewidths below 10 Hz are measured. Recovered clock pulses featuring a width of 1.6 ps are obtained irrespective of the wavelength detuning between the laser spectra and the optical carrier of the incoming data stream.

Mode-locked fiber and solid state lasers have played an essential role in several scientific and technological developments. The integration of mode-locked lasers on chips could enable their use in a wide range of applications. The advancement of semiconductor mode-locked laser diodes has been going on for several decades, but has recently seen the development of novel devices based on generic InP and III-V-on-silicon photonic integration platforms. These photonic integration platforms enable the use of standardized components and low-loss waveguides within the laser cavity, allowing for the design of advanced extended cavities. In this manuscript we give a review of these novel devices and compare their performance.