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This paper presents a wide input range active rectifier using a bipolar-CMOS-DMOS (BCD) process with a high voltage conversion ratio (VCR) and high power conversion efficiency (PCE). The proposed rectifier ensures safe and robust operation under large input voltage variations, which can be caused by changes in the magnetic coupling or loading conditions. It supports an input voltage range 3–12 V with the adaptive delay-compensated active operation of the power switches. An active signal clamper and voltage-time hybrid gate control circuit with two compensation loops was proposed for the optimal gate transition of low-side NMOS switches. For high-side PMOS switches, a fully integrated low-power-consuming high-side driver is proposed to replace the conventional high-side gate driving structure. The proposed active rectifier was fabricated through a TSMC 0.18 μm BCD process. The measurement results show that the proposed rectifier achieves stable and well-delay-compensated active operation, resulting in a high VCR and PCE with a wide output power range from 4.5 to 288 mW. Peak VCR and PCE of 96.8% and 93.7%, respectively, were achieved. [ABSTRACT FROM AUTHOR]