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This paper proposes a systematic sizing methodology for switched-capacitor DC/DC converters aimed at maximizing the converter efficiency under the die area constraint. To do so, we propose first an analytical solution of the optimum switching frequency to maximize the converter efficiency. When the parasitic capacitances are low, this solution leads to an identical contribution of the switches and transfer capacitors to the converter output impedance. As the parasitic capacitances increase, the optimum switching frequency decreases. Secondly, optimum capacitor and switch sizes for maximum efficiency are provided. We show that the overdrive voltage strongly impacts the optimum switch width through the modification of their conductance. To support the sizing methodology, a model of the efficiency of switched-capacitor DC/DC converters is developed. It is validated against simulation and measurement results in 65 nm and 0.13 \mu\ m CMOS, respectively. The proposed sizing methodology shows how the converter efficiency can be traded-off for die area reduction and what is the impact of parasitic capacitances on the converter sizing. [ABSTRACT FROM AUTHOR]

The general structure of a multilevel multistate dc–dc converter is introduced, which is a hybrid between inductor-based (buck) converters and capacitor-based (switched capacitor) converters. The control of the new converter is hybrid between switched capacitor converters and buck converters, where the coarse tuning of the output voltage is achieved through the selection of an appropriate operating region similar to an SC converter, while fine tuning is achieved through the adjustment of a duty cycle value similar to a buck converter. A silicon implementation of a four-level four-state hybrid converter is presented as a specific example of the general hybrid converter structure. A new state interleaving technique was employed resulting in an increased effective switching frequency of the converter. Silicon measurements of the integrated four-level four-state converter on a 65-nm GF technology show that the converter can cover a wide range of output voltage values achieving a peak efficiency of 93% with a power density of 47 mW/mm2. The implemented converter attains a response time in the sub- ${\mu }\text{s}$ range with output voltage ripples below 50 mV. [ABSTRACT FROM AUTHOR]