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Ferroelectric field effect transistor (FeFET) memory has shown the potential to meet the requirements of the growing need for fast, dense, low-power, and non-volatile memories. In this paper, we propose a memory architecture named crossed-AND (C-AND), in which each storage cell consists of a single ferroelectric transistor. The write operation is performed using different write schemes and different absolute voltages, to account for the asymmetric switching voltages of the FeFET. It enables writing an entire wordline in two consecutive cycles and prevents current and power through the channel of the transistor. During the read operation, the current and power are mostly sensed at a single selected device in each column. The read scheme additionally enables reading an entire word without read errors, even along long bitlines. Our Simulations demonstrate that, in comparison to the previously proposed AND architecture, the C-AND architecture diminishes read errors, reduces write disturbs, enables the usage of longer bitlines, and saves up to 2.92X in memory cell area. [ABSTRACT FROM AUTHOR]

Despite the increasing popularity of deep neural networks (DNNs), they cannot be trained efficiently on existing platforms, and efforts have thus been devoted to designing dedicated hardware for DNNs. In our recent work, we have provided direct support for the stochastic gradient descent (SGD) training algorithm by constructing the basic element of neural networks, the synapse, using emerging technologies, namely memristors. Due to the limited performance of SGD, optimization algorithms are commonly employed in DNN training. Therefore, DNN accelerators that only support SGD might not meet DNN training requirements. In this paper, we present a memristor-based synapse that supports the commonly used momentum algorithm. Momentum significantly improves the convergence of SGD and facilitates the DNN training stage. We propose two design approaches to support momentum: 1) a hardware friendly modification of the momentum algorithm using memory external to the synapse structure, and 2) updating each synapse with a built-in memory. Our simulations show that the proposed DNN training solutions are as accurate as training on a GPU platform while speeding up the performance by $886\times $ and decreasing energy consumption by $7\times $ , on average. [ABSTRACT FROM AUTHOR]

Data-intensive applications such as image processing suffer from massive data movement between memory and processing units. The severe limitations on system performance and energy efficiency imposed by this data movement are further exacerbated with any increase in the distance the data must travel. This data transfer and its associated obstacles could be eliminated by the use of emerging non-volatile resistive memory technologies (memristors) that make it possible to both store and process data within the same memory cells. In this paper, we propose four in-memory algorithms for efficient execution of fixed point multiplication using MAGIC gates. These algorithms achieve much better latency and throughput than a previous work and significantly reduce the area cost. They can thus be feasibly implemented inside the size-limited memory arrays. We use these fixed point multiplication algorithms to efficiently perform more complex in-memory operations such as image convolution and further show how to partition large images to multiple memory arrays so as to maximize the parallelism. All the proposed algorithms are evaluated and verified using a cycle-accurate and functional simulator. Our algorithms provide on average $200\times $ better performance over state-of-the-art APIM, a processing in-memory architecture for data intensive applications. [ABSTRACT FROM AUTHOR]

Memristors have proven to be an attractive feature for memory, logic-in-memory, and neuromorphic computing. Recently, radio-frequency memristive switches (RFMSs) have exhibited promising high-frequency performance, opening the possibility of their use in radio-frequency integrated circuit applications. In this paper, we present two novel topologies of Tunable Inductors using MEmristors, the memristive–via the switched tunable inductor and the multi-layer stacked inductor switched by an RFMS single-pole double-throw. The two inductor topologies are fully passive and are tuned by electrochemical metallization memristors. Memristive devices improve the performance of tunable inductors, as they provide low-area overhead, low-energy switching, and non-volatility, resulting in more compact and energy-efficient devices. The topologies are implemented and simulated in a momentum 3-D planar electromagnetic simulator. Simulation results show a maximum tunability of 296%, a quality factor of 18 at 5 GHz, and self-resonant frequency above 8.4 GHz. [ABSTRACT FROM PUBLISHER]

Memristive devices are novel devices, which can be used in applications ranging from memory and logic to neuromorphic systems. A memristive device offers several advantages: nonvolatility, good scalability, effectively no leakage current, and compatibility with CMOS technology, both electrically and in terms of manufacturing. Several models for memristive devices have been developed and are discussed in this paper. Digital applications such as memory and logic require a model that is highly nonlinear, simple for calculations, and sufficiently accurate. In this paper, a new memristive device model is presented—TEAM, ThrEshold Adaptive Memristor model. This model is flexible and can be fit to any practical memristive device. Previously published models are compared in this paper to the proposed TEAM model. It is shown that the proposed model is reasonably accurate and computationally efficient, and is more appropriate for circuit simulation than previously published models. [ABSTRACT FROM PUBLISHER]