1. Low temperature bonding of epitaxial lift off devices with AuSn
- Author
-
Dohle, G. Rainer, Drabik, Timothy J., Callahan, John J., and Martin, Kevin P.
- Subjects
Optoelectronic devices -- Equipment and supplies ,Microwave devices -- Equipment and supplies ,Gold alloys -- Usage ,Materials at low temperatures -- Observations ,Business ,Engineering and manufacturing industries ,Science and technology - Abstract
A technique for mechanical bonding of epitaxial lift off films to the substrates achieves high-quality very-thin bonding layers at a temperature of 235 degrees centigrade. A multilayer structure of AuSn alloy achieves this thin layer bonding in an oxygen free environment. The technique can optimize layer sizes, bonding parameters, and diffusion barriers as per requirements. Surface analysis methods, such as optical microscopy, scanning electron microscopy, and energy dispersive X-ray analysis, are used to analyze the bonded specimens of the optoelectronic and microwave devices.
- Published
- 1996