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Generally, for pulsed power applications with low jitter and high repetition rates, the use of semiconductor switches have replaced the traditional gap switches and thyratron circuits due to the limited lifetime of the thyratron and gap switches under such operating conditions. However, the limited ratings of these semiconductor switches require series and/or parallel stacking in order to handle high voltages and current levels associated with the discharge energy. Described in this paper is the design of a high voltage switch that uses a simple and reliable gate driver circuit for pulsed power application. In this design, the switch module is made up of insulated-gate bipolar transistor (IGBTs) and their gate driver circuits compactly fitted onto a single module. The ease by which the switch modules can be configured (series stacking and/or parallel stacking) to meet future load variations allows for flexible operation of this design. In addition, the detailed implementation of the gate driver circuit for reliable and easier synchronization of the switches, the simultaneous transfer of both signal and power for current boost are also described in this paper. A 120 nF capacitor bank energy was discharged using a configuration of the developed high voltage switch and a developed 15 kV, 1.5 kJ/s peak power capacitor charger, and by experimental results, the operation of the proposed circuit was verified to be effectively used as a switch for pulse discharging. [ABSTRACT FROM AUTHOR]

High voltage Marx generator implementation using IGBT (Insulated Gate Bipolar Transistor) stacks is proposed in this paper. To protect the Marx generator at the moment of breakdown, AOCP (Active Over-Current Protection) part is included. The Marx generator is composed of 12 stages and each stage is made of IGBT stacks, two diode stacks, and capacitors. IGBT stack is used as a single switch. Diode stacks and inductors are used to charge the high voltage capacitor at each stage without power loss. These are also used to isolate input and high voltage negative output in high voltage generation mode. The proposed Marx generator implementation uses IGBT stack with a simple driver and has modular design. This system structure gives compactness and easiness to implement the total system. Some experimental and simulated results are included to verify the system performances in this paper. [ABSTRACT FROM AUTHOR]

An all solid-state high-voltage rectangular pulse generator is proposed in this paper. This generator broadly consists of a Marx generator, a pulse forming line (PFL) and a magnetic switch (MS). As the power supply, the Marx generator discharges to the PFL through an inductor. The inductor should cooperate with MS since it influences the discharging process directly and determines the volt-second product of the MS and the pre-pulse over the load. The MS saturates at exactly the moment the discharging process ends. Then PFL discharges to the matched resistor load through the saturated MS and a high voltage rectangular pulse is obtained over the load. The design of Marx generator and MS are introduced in this paper. Experiments under a single shot and repetitive frequency of 5 kHz were carried out. PSPICE simulations with a simplified model of MS were carried out to verify the experimental results. The experimental result matches well with the results of the simulation. A rectangular pulse with 12.5 kV voltage amplitude, 46-ns rise-time, 220 ns pulse-width was obtained over the 50 Ω resistor load. [ABSTRACT FROM PUBLISHER]

This paper presents a capacitor charging power supply (CCPS) using high-voltage dc/dc converter for pulsed power applications. For the main converter, it used full-bridge phase-shifted (FBPS) pulse-width modulation (PWM) converter. The proposed CCPS has modularity concept, and the output voltage was boosted by a high-voltage high-frequency (HVHF) transformer included in FBPS PWM converter. The control method is used a phase-shifted PWM to reduce the losses caused by switching. To solve the voltage unbalancing problem of the output capacitors, synchronization algorithm is selected. Also Thermal characteristics are analyzed by theoretical calculation and simulation. Experimental results of the single module and CCPS are provided to validate the effectiveness of the proposed system and it was carried out the 20-kV 160-kW prototype. [ABSTRACT FROM PUBLISHER]

This paper focuses on the potential of epoxy resin/aluminum nitride (EP/AIN) nanocomposites through experiments and simulation for the packaging material of a 15 kV SiC-IGBT module. For this purpose, space charge, AC breakdown, thermal conductivity and glass transition temperature $(T_{\mathrm{g}})$ are measured. The electric stress reduction effect in EP/AIN nanocomposites is compared to the traditional packaging material at high-frequency AC and square voltages at 150 °C using the electric field simulation. The experimental results show that the 2 wt% EP/AIN nanocomposite exhibits the least space charge accumulation, highest AC breakdown strength and $T_{\mathrm{g}}$ amongst the tested nanocomposites. The offset of metallization layers plays a crucial role in the impact of the electrical properties of packaging materials on the electric field of the packaging structure. When the offset of metallization layers is zero, the maximum electric stress in the EP/AIN nanocomposites is lower than the traditional packaging material, both under the AC and square voltages. In the EP/AIN nanocomposites, as the frequency or the nano-AIN content increases, the maximum electric stress decreases under the AC voltages. Traditional packaging materials have a steeper transient electric field variation than EP/AIN nanocomposites, although the transient process is smoother at higher frequencies under square voltages for all the considered materials. A simplified physical model is proposed to explain the electric field distribution variation in the packaging structure under the AC voltages. [ABSTRACT FROM AUTHOR]

The Power Systems Development group at SLAC has developed an improved design for the H-bridge switch plates of the High Voltage Converter Modulators at the Spallation Neutron Source. This integral modulator component has been identified as the source of numerous modulator faults. This paper presents the design and implementation of the alternative switch plate, which is based upon press-pack IGBTs. [ABSTRACT FROM AUTHOR]

The conventional unipolar Marx generator can be employed for bipolar pulsed electric field by adding a high-voltage H-bridge at the load side which necessitates stacked switches. Alternatively, bipolar Marx generator with low-voltage switches can be employed. The existing bipolar Marx generators are typically fed from dc supplies, where polarized capacitors are employed. The capacitance of involved capacitors is selected such that the total energy stored in the generator's capacitors is higher than the bipolar pulse energy. As a result, polarized capacitors with relatively high capacitances are required. In addition, a high number of controlled switches per stage are required (at least four switches per stage). In this paper, a new solid-state bipolar Marx pulse generator with only three controlled switches per stage is proposed. The proposed generator is fed from sinusoidal/square ac voltage and non-polarized capacitors with low capacitance are employed. The proposed bipolar Marx-generator can be used effectively with resistive loads for exponential pulse generation. A detailed illustration of the proposed approach is presented and a discussion, to elucidate the differences between the proposed pulse generator and the other existing ones, are presented. Simulation results for the proposed pulse generator are presented to validate the concept. Finally, experimental results have been obtained from a low-voltage model of the proposed generator. [ABSTRACT FROM AUTHOR]

Plasma synthetic jet (PSJ) has a wide application prospect in flow separation suppression and boundary layer control. Comparing with traditional control methods, synchronous discharges of PSJ with high repetition frequency and high energy could achieve a better flow control effect because it can meet multi-angle, wide-range and long-time flow control requirements. In this paper, a microsecond-pulse power supply for synchronous discharges of three plasma synthetic jet actuators (PSJA) is developed. Parameters of output pulses are as follows: the maximum voltage pulse is 10 kV, the pulse repetition rate is 1000 Hz and the full width is 15 ?s. The generator can withstand a discharge current with an amplitude of 320 A and a discharge energy of 150 mJ. The electrical characteristics of the synchronous discharges of PSJAs including the voltage-current waveforms, discharge images and Schlieren images are investigated. The experimental result shows that the microsecond-pulse generator could sustain three discharge channels in PSJAs when the output voltage is 10 kV. These discharge channels have preferable performance in synchronicity when the repetition frequency is 1000 Hz. Furthermore, the Schlieren images show that the power supply can sustain three PSJAs with a maximum jet velocity of up to 150 m/s. [ABSTRACT FROM AUTHOR]

Moisture in a high power Insulated Gate Bipolar Transistor (IGBT) module raises serious concern on component and system level reliability. Employing diagnostic test methods on high power IGBT modules might provide an opportunity in detection and estimation of moisture, however has not received wide attention. This paper investigates on understanding the influence of moisture in high power IGBT modules through time and frequency dependent dielectric response measurements and partial discharge analysis. The moisture in the main insulation of an IGBT module under DC excitation produces a sharp rise in its response current introducing deviation in their respective time dependent dielectric properties. Alternatively, the frequency dependent dielectric response measurements under wide frequencies provide more information than their DC counterpart. This method enables discrimination of various defects such as moisture, physical defects, etc., thereby revealing a clear picture about the actual status. In particular, the lower frequencies reveal longer range ion movements, hence could be used for more accurate estimation of moisture. The higher frequencies though not accurate in moisture estimation reveal deviation in the material properties. These deviations alter the apparent dielectric characteristics such as loss factor, permittivity, etc., of the IGBT samples which becomes clear through simple comparative analysis. In conclusion, the findings in this paper might help in understanding the influence of moisture over the dielectric integrity of a high power IGBT module. Additionally, the permissible or acceptable level of moisture which might act as a threshold to initiate necessary precautionary measures could be subsequently developed. [ABSTRACT FROM PUBLISHER]

This paper investigates on dielectric condition assessment of high power Insulated Gate Bipolar Transistor (IGBT) modules through modern dielectric and diagnostic test methods. Two groups of IGBT samples (new and aged) are selected for this purpose. The new IGBT samples are grouped as 'set-1/virgin' and marked as 'A', 'B', 'C', 'D' and 'E' respectively. Amongst all, a fault (electric puncture) is introduced into the sample 'E'. The samples 'A' and 'B' are maintained virgin while samples 'C', 'D' and 'E' are subjected to partial discharge measurements as recommended by IEC60270. The samples are qualitatively ranked based on their PD level. Subsequently, the dielectric condition of each sample is measured and analyzed over a wide span and frequency. Following this, similar experiments are carried out on IGBT samples that were aged under service and their behaviour over a wide frequency is analyzed. In conclusion, the present study might provide an opportunity in improvement of diagnostic and quality control test methods that are currently exercised on IGBT modules and power conversion devices. Also, these findings enable discrimination of electrical discharges caused by IGBT modules in power conversion equipments which might help in accurate determination of their dielectric condition and reliability. [ABSTRACT FROM PUBLISHER]

This paper presents the design of IGBT-based switching modules for a nitrogen gas laser. First, the CC-topology, which drives the laser, is discussed and simulated. Simple models of the laser tube and the switch are presented. The comparison of the simulation with experimental data shows good accuracy. The results are used to discuss the influence of the parasitic inductance and the capacitances on the laser tube behavior. Cascades with an 11-cell series connection based on different IGBT-chips (1700 V and 1200 V) have been built up and measured. The focus of the design is the high speed synchronous switching of all switching cells. Therefore, the design of a pulse transformer-based gate drive and a symmetrization network is presented. The module equipped with the four parallel 1200 V/35 A-IGBTs per cell produces the highest switching power. Among the variants, the switch peak current is up to 700 A at blocking voltages of up to 13.2 kV in the real environment of the nitrogen laser. The switch current slope reaches up to 30 A/ns and the laser tube current up to 1.8 kA. The variant with 1200 V/35 A-IGBTs produces an output energy which is about 15 % higher compared to the former MCT-based switch. Furthermore, a modified CCtopology for lower blocking voltage is investigated. The IGBT-based switches are able to replace the MCT-switches in this application. Between the different switches a tradeoff has to be done between high output energy and the effort for the assembly. [ABSTRACT FROM PUBLISHER]

This paper describes the implementation of a load voltage observer into the control algorithms of a Rapid Capacitor Charger controlled by a digital signal controller (DSC) with a fast DSP core. A hybrid peak current mode control algorithm with digital control of the PWM signal and high speed analog current sensing is used to control the inverter of the charger. The DSC controller keeps the current loop stable using adaptive slope compensation. In addition to providing fast adaptive digital control of the current loop, the DSC can perform additional functions such as estimation of the voltage level of the load capacitor. This avoids the cost, bandwidth limitations and insulation challenges of a conventional HV-sensor. To evaluate the performance of the load voltage observer, we measured the output voltage with a laboratory grade HV probe to establish a reference to test the results of the digital algorithm. [ABSTRACT FROM PUBLISHER]

Repetitive high voltage pulsed power system proposed in this study originates from conventional Marx generators. This newly developed Marx modulator employs high voltage (HV) Insulated Gate Bipolar Transistors (IGBT) as switches and series-connected diodes as isolated components. Self-supplied IGBT drivers and optic signals are used in the system to avoid insulation problem. Experimental results of 20 stages generating pulses with 60 kV, 20-100 µs and 50-500 Hz are presented to validate the performance of the system in the paper. [ABSTRACT FROM AUTHOR]

Capacitor charging power supply (CCPS) is one of the most important components of a pulsed power system. The CCPS studied in this paper is used in power conditioning systems for Laser Nuclear Fusion. With a view to enabling multiple CCPSs to work concurrently in an environment of high voltage, high power and strong electromagnetism, this paper carries out a profound and systematic research into the characteristics of a capacitor charging power supply, including charging rate, harmonic features, efficiency and voltage precision, etc. Furthermore, some measures to improve the characteristics of CCPS are put forward. The advantages of high charging rate, low harmonic, high efficiency and accurate charging voltage are proved by the results of experiments and the performance in practical operation on a 23.5 kV, 50 kW, 4400 μF CCPS. [ABSTRACT FROM AUTHOR]

The High Voltage Convertor Modulators are used to power the RF klystrons used throughout the linear accelerator at the Spallation Neutron Source. The output voltage of the modulator has significant voltage droop and ripple which, combined with low level RF system limitations, affect performance and stability of the accelerator cavities. In conjunction with the progress in the development of the new controller, different modulation techniques were implemented and studied on the test modulator rated at 75 kV, 125 A. This paper presents experimental results from implementation of frequency sweep, phase sweep and combined phase and frequency sweep modulation on the modulator output voltage pulse. Thermal measurements were carried out to determine the effect of these modulations schemes on long term reliability of the modulator. Future plans are also discussed. [ABSTRACT FROM AUTHOR]

An all solid-state Marx modulator utilizing Insulated Gate Bipolar Translators (IGBTs) is capable of outputting pulses with variable pulse width, repetitive pulse frequency and varying voltage amplitude. But the relatively slow turn-on speed of IGBT with high current loads result in slow rise time of output pulses. If a magnetic switch (MS) is combined with an all solid-state Marx, it will be quite simple to obtain nanosecond pulses with rise times under 100 ns. In this paper, several topologies for pulsed generators are proposed based on an all solidstate Marx and MS. When MS is connected in series with Marx, the rise time of the 200-Ampere load pulse is reduced from 560 ns to 85 ns. Besides, the switch-on loss of all IGBTs is considerably reduced. When a peaking capacitor is added, a 30 kV exponential decaying pulse with a rise time of 36 ns is obtained on a 100 ? resistor load. When the peaking capacitor is replaced by 20 m long pulse forming line (PFL), a 12.4 kV rectangular pulse with 223 ns pulse width (full width at half maximum), 44 ns rise time and 56 ns fall time is obtained on a 50 Ω resistor load. When the PFL is replaced by a Blumlein Transmission Line (BTL), the amplitude of the load voltage can be doubled on the price of a larger pre-pulse. Besides, generator with BTLs is quite proper for dielectric barrier discharge (DBD) loads. Experiments show that over 10 DBDs are excited in 4 μs under a single shot, which means extremely intense plasma is produced due to the accumulation effect. This phenomenon suggests great potential value for industrial applications. [ABSTRACT FROM AUTHOR]

As extension of power transformers, efficient large-scale contactless power transfer between stationary and reference frames is a problem of world-wide importance, to such applications as electric vehicles, materials handling and plasma heating for fusion science. Tokamak is the common developed fusion device where heating is recognized as one of its key technologies for its future reactor roadmap. Snubber is often used as protection device in NBI system for Tokamak heating [1-3]. The present NBI generally use 50/60 Hz High Voltage (HV) Insulation Transformers to configure its dc power supply to offer the bias current to the snubber, which could use the full flux swing of the core from the negative saturation point to the positive one of its BH major loop. The snubber weight could then be decreased to its half by using the bias power supply. But this 50/60Hz HV insulation transformer is much heavier than High Frequency (HF) High Voltage (HV) Insulation system. The paper gives the requirement, design and test of this Compact Power Systems based on HF HV Zero Current Switching (ZCS) technologies for Experimental Advanced Superconducting Tokamak (EAST) NBI snubber as well as its potential for its compact HVDC power supply. Its new control strategy is also implemented with one macro pulse composed by the digital defined continuous micro pulses. Some experimental evaluations have been done to verify the analysis results, which have been extended to over 100s and could be used for detail engineering design of power supplies for EAST based on IGBT. [ABSTRACT FROM PUBLISHER]

This paper describes the design of a compact and highly repetitive pulsed power modulator based on semiconductor switches. Output specifications of the proposed modulator are as follows: variable output pulse voltage, 1-10 kV; width, 1-10 μs; pulse repetition rate (PRR), 1-50,000 pps; and average output power, 10 kW. The proposed solid-state pulsed power modulator has two main parts: an IGBT stack that hasa gate drive circuit for the pulse output with a variable pulse width and repetition rate, and a capacitor charger that has a controllable output voltage. To connect all the storage capacitors in a series for high voltage pulses, a simple and reliable IGBT stack structure was proposed based on the Marx generator. In addition, the gate driver circuit, which supplies power and signals to all the IGBTs simultaneously, was introduced. This providesa superior protection function against the arc and the short. To charge the storage capacitors, a novel 10 kW (10 kV, 1 A) high voltage capacitor charger with the combined advantageof a series-loaded resonant converter and a ZVS (zero-voltage-switching) full-bridge pulse width modulation (PWM) converter was proposed and designed especially for the solid-state pulsed power modulator. Theexperiment results verified that the proposed scheme and structure can be used effectively for a high voltage pulsed power modulator that requires variable voltage, repetition rate, and pulse width, depending on the process of the applications. [ABSTRACT FROM AUTHOR]

Magnetic pulse compression (MPC) system has been widely-used over a few decades as a technique for producing short duration, high peak power pulses reliably. A compact pulse generator with a 3-stage MPC system (assembled with amorphous cores and ferrite cores) is constructed to generate repetitive pulses of maximum 7.5 MW peak power with pulse width (FWHM) of 70 ns and rise time of 30 ns at the maximum pulse repetition rate of 2 kHz into a 307 resistive load. In this paper, the detailed system design and operational characteristics of the MPC modulator are presented. The MPC has 3-stage pulse compression circuit using two saturable pulse transformers and a magnetic switch. The saturable pulse transformer has two functions, a step-up transformer and a magnetic switch. The generator consists of 2 units with distinct functions. The resonant charge unit is a diode based auto L-C resonator recharger. The 3-stage MPC unit comprises a saturable pulse transformer which compress the pulse width to 1.5 ?s and step up the amplitude to 7 kV, and a 2-stage magnetic pulse compressor using another saturable pulse transformer and a magnetic switch, which compress the pulse rise time to 30 ns and step up the amplitude to 62 kV at most (1 k? resistive load). [ABSTRACT FROM AUTHOR]

This paper describes the operation of a solid-state series stacked topology used as a serial and parallel switch in pulsed power applications. The proposed circuit, developed from the Marx generator concept, balances the voltage stress on each series stacked semiconductor, distributing the total voltage evenly. Experimental results from a 10 kV laboratory series stacked switch, using 1200 V semiconductors in a ten stages solid-state series stacked circuit, are reported and discussed, considering resistive, capacitive and inductive type loads for high and low duty factor voltage pulse operation. [ABSTRACT FROM AUTHOR]

This paper presents operational data and parameters of the newest generation of polyphase resonant high voltage converter modulator (HVCM) as developed and delivered to the KAERI 100 MeV "PEFP" accelerator. The KAERI design realizes improvements from the SNS and SLAC designs. The present KAERI system operates two parallel THALES TH2089F 350 MHz klystrons with total power draw of 50 amperes at 105 kV. An additional 3 klystron system operating at 105 kV and 75 A is also being considered for the high energy sections of this accelerator. In these systems, to improve the IGBT switching performance, the HVCMs will be fitted with artificial zero-voltage-switching (ZVS) networks at turn-off. This new method of artificial ZVS should result in a 6 fold reduction of IGBT switching losses. This will improve the HCVM conversion efficiency to better than 95% at full average power, which is 500 kW for the 2 klystron system and 750 kW for the 3 klystron system. The artificial ZVS is accomplished by placing a soft switching capacitor network across the resonant boost transformer primary winding. This low loss snubber circuit reduces the dv/dt across the IGBTs at turn-off. As the transformer input busswork is extremely low inductance (<10 nH), the single network acts like it is across each IGBT collector-emitter terminal of the 4 transistor H-bridge switching network. We will review these topological improvements and the overall system as delivered to the KAERI accelerator with details of the installed operational results. [ABSTRACT FROM AUTHOR]

This work assesses the initial and crucial part of electrical treeing degradation, the inception stage, focusing on its dependence on applied voltage waveform and frequency. Tests have been performed on needle-plane configuration samples in solids and gels. A physical model has been formulated through an adaptation of an established theory for solids in which electrical tree inception is related to damage-producing injection currents. The voltage rise time appeared to be the most important parameter influencing the tree inception in the gel, while in the solid material the frequency is more relevant. The analysis leads to the conclusion that tree inception in gels is due to a single high-energy event, in contrast to what is commonly known for solids where damage accumulation takes place. A tree inception model is proposed for the gel, in which initiation is driven by a pressure wave generated by the electric field and the space charge injected into the sample. The model fits the experimental data and may be used to predict the tree initiation for different waveforms and voltage values. [ABSTRACT FROM AUTHOR]

Initiation of partial discharges at the highly stressed regions of an Insulated Gate Bipolar Transistor (IGBT) can lead to degradation of the insulation and eventual total breakdown of the system. In this work, an experimental setup has been designed for the study of partial discharges (PDs) under different voltage waveforms. PD behavior of IGBT insulation was investigated using conventional and optical techniques. Influence of pressure and voltage wave shape is documented. The test environment was first characterized with point-plane geometry under sinusoidal and slow rise square voltage of up to 20 kVpeak and fast rise square voltage of up to +50 kV. The measured electrical and optical PDs showed good correlation, revealing that optical PDs can be relied on for the characterization of PD phenomena. High slew rate of the square voltage reduced the inception voltage and increased magnitude. The PD pattern from the trench shows the existence of space charges. The PDs which occurred within the triple point region are most likely attracted along the board interface and become surface discharges. Pressure suppresses the initiation and propagation of the discharge. [ABSTRACT FROM AUTHOR]

High electric field strengths at the edge of the metallization of insulated gate bipolar transistor (IGBT) power modules are, besides defects in the substrate or the potting gel, the main reason for partial discharge. These critical electric field strengths occur at the energized contact where it is bordered by the insulating ceramic and the cover (mostly silicone gel). The reduction of high electric field strengths for increasing the threshold voltage for partial discharge has been studied in several publications based on experiments as well as on simulations. Simulations allow the localization of the critical spots and the quantification of the maximum electric field strength. However, a systematic study of the singularities of the electric field strength at the sharp edges is lacking. Such singularities are investigated in this article. The calculation of an absolute electric field strength value is only possible for finite edge radii. For sharp edges, however, the maximum electric field strength returned by simulation depends on the grid size: Through the finite grid size a virtual edge radius is induced that suppresses the singularity at the edge. To get around this problem, a mesh-independent evaluation procedure is introduced. With this procedure it is possible to quantitatively evaluate the electric field strength in the vicinity of the sharp edge. As an example, the influence of the offset between the top and bottom metallization layer on the maximum electric field strength is studied. Moreover, the influence of the thickness of the involved layers and of the shape of the electrodes is discussed. Also, the impact of the material properties of the involved dielectrics is examined. In addition to electrostatic simulations we have carried out electric transient simulations, which show that the ratio of the conductivities of the involved dielectric materials plays a major role for determining the maximum electric field strength. [ABSTRACT FROM AUTHOR]

The role of composite voltage waveforms on prebreakdown processes was studied at atmospheric conditions in a small point-plane gap with a synthetic ester Midel 7131 fluid, representing a model for the insulation in power electronic components. Shadowgraphic imaging and photomultipliers to record emitted light were used to measure streamer initiation voltages, streamer propagation lengths and velocities. The applied voltages were step voltages (100 ns rise time) with or without a dc bias. Results have demonstrated the presence of space charges in the vicinity of electrodes. With a step voltage with the same polarity as the dc prestress, initiation voltages increased and propagation lengths were reduced. For a polarity reversal for positive steps the initiation voltages were reduced and propagation lengths increased as expected, while for negative step the opposite was seen. The latter is explained by an electron "cleaning" effect of the positive dc prestress reducing possibilities for electron avalanches. It is shown that streamers may be initiated by a sudden turn off of a dc stress. [ABSTRACT FROM AUTHOR]

High voltage pulsed power supply using IGBT (Insulated Gate Bipolar Transistor) stacks and pulse transformer for plasma source ion implantation is proposed. To increase voltage rating, twelve IGBTs are used in series at each IGBT stack and a step-up pulse transformer is utilized. To increase the current rating, the proposed system makes use of synchronized three pulse generator modules composed of diodes, capacitors and IGBT stacks. The proposed pulsed power supply uses semiconductor switches as main switches. Hence, the system is compact, and has semi-infinite lifetime. In addition, it has high flexibility in parameters such as voltage magnitude (10-60 kV), pulse repetition rate (PRR) (10-2000 pps), and pulse width (2-5 µS). [ABSTRACT FROM AUTHOR]