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In this article, we demonstrate a high-performance Pt/NbOx/Ru selector based on metal–insulator transition (MIT), which exhibits low leakage current (5.67 × 10 −5 A/cm2), excellent endurance (>106), and ultrahigh uniformity (<2.5%) in particular and performs great potential to achieve 3-D storage integration. Furthermore, the decrease of the threshold voltage drift and the improvement of stability can be interpreted as the formation of RuO2 layer at the interface between Ru electrode and oxide layer. The application of Ru in selector provides the industry with a choice to enhance the uniformity and stability. [ABSTRACT FROM AUTHOR]

The niobium oxide insulator–metal transition selector device is considered to be a rectifying device with great potential. However, the lack of research on the experimental parameters and the complex physical mechanism of the NbO2 device seriously affected its development. In this article, a controllable intermediate functional layer of NbOx was reported in the Pt/NbOx/TiN device subjected to different forming compliance currents (FCCs) and compliance currents (CCs). The different FCCs and CCs changed the size of the Nb2O5 and NbO2 layers within the NbOx layer, which further affected the threshold voltage. The result helped to realize the control of the NbOx functional layer, which was also of great significance for the adjustment of the experimental parameters in the preparation experiment according to the required performance. Furthermore, the I-V characteristics and switching times at different ambient temperatures were carried out, showing the specific dependency of the device on temperature. Between them, the simulated switching time of 2 ns at room temperature proved that the selector had a great application prospect in high speed and high-density storage or logic switch. Generally, the whole research helped to improve the control of the interlayer structure and the performance of the device for application in 3-D crossbar arrays, and provided a valid model to study the device. [ABSTRACT FROM AUTHOR]

In the study of resistive random access memory using GeTeOx film as the switching layer, the device performed excellent property of bipolar resistive switching (BRS), which could be gradually transformed to the complementary resistive switching (CRS) by varying SET process current compliance. The conductive filament conduction mechanism of BRS could be verified by electrical characteristics and reliable data fitting. Through increasing current compliance of the SET process, CRS could be achieved due to higher activity of oxygen vacancies originated from the intensified thermal effect. This paper was beneficial to understand the switching mechanisms of BRS and CRS and provide a method to realize interconversion. Moreover, it was also a potential and promising device to be applied in the neurosynaptic biomimetic field. [ABSTRACT FROM AUTHOR]