1. A Physics-Based Compact Model for Ultrathin Black Phosphorus FETs—Part II: Model Validation Against Numerical and Experimental Data.
- Author
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Yarmoghaddam, Elahe, Haratipour, Nazila, Koester, Steven J., and Rakheja, Shaloo
- Subjects
MODEL validation ,TRANSISTORS ,PHOSPHORUS ,TEMPERATURE effect ,SCHOTTKY barrier ,SURFACE potential - Abstract
In the first part of this article, a physics-based surface-potential compact model to describe current–voltage (I–V) relationship in few-layered ambipolar black phosphorus (BP) transistors is presented. The proposed model captures the essential physics of thin-film BP FETs by accounting for the effects of: 1) in-plane band-structure anisotropy in BP, as well as the asymmetry in electron and hole current conduction characteristics; 2) nonlinear Schottky-type source/drain contact resistances; 3) interface traps; 4) ambipolar current conduction in the device using two separate quasi-Fermi levels for electrons and holes; and 5) the effect of temperature on the model parameters. In this article, the model is validated against measured data of back-gated BP transistors with gate lengths of 1000 and 300 nm with the BP thickness of 7.3 and 8.1 nm and for the temperature range of 200–298 K. We also validate the model against numerical TCAD data of BP transistors with channel lengths of 300 and 600 nm and BP thickness of 6 nm. The model is also applied to unipolar 2-D FETs with channel materials, such as MoS2 and WSe2. Compared with prior BP FET models that are mainly suited for near-equilibrium transport and room-temperature operation, the model developed here shows excellent agreement with experimental and numerical data over broad bias and temperature range. [ABSTRACT FROM AUTHOR]
- Published
- 2020
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