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Resistive switching memory (RRAM) features many optimal properties for future memory applications that make RRAM a strong candidate for storage-class memory and embedded nonvolatile memory. This paper addresses the cycling-induced degradation of RRAM devices based on a HfO2 switching layer. We show that the cycling degradation results in the decrease of several RRAM parameters, such as the resistance of the low-resistance state, the set voltage V\mathrm{ set} , the reset voltage V\mathrm{ reset} , and others. The degradation with cycling is further attributed to enhanced ion mobility due to defect generation within the active filament area in the RRAM device. A distributed-energy model is developed to simulate the degradation kinetics and support our physical interpretation. This paper provides an efficient methodology to predict device degradation after any arbitrary number of cycles and allows for wear leveling in memory array. [ABSTRACT FROM AUTHOR]

Resistive-switching random access memory (RRAM) is widely considered as a disruptive technology. Despite tremendous efforts in theoretical modeling and physical analysis, details of how the conductive filament (CF) in metal-oxide-based filamentary RRAM devices is modified during normal device operations remain speculative, because direct experimental evidence at defect level has been missing. In this paper, a random-telegraph-signal-based defect-tracking technique (RDT) is developed for probing the location and movements of individual defects and their statistical spatial and energy characteristics in the CF of state-of-the-art hafnium-oxide RRAM devices. For the first time, the critical filament region of the CF is experimentally identified, which is located near, but not at, the bottom electrode with a length of nanometer scale. We demonstrate with the RDT technique that the modification of this key constriction region by defect movements can be observed and correlated with switching operation conditions, providing insight into the resistive switching mechanism. [ABSTRACT FROM PUBLISHER]