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In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO2-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0.45 to 0.65 V. It is found that TR follows a voltage dependence which closely resembles the one exhibited by metal-insulator-semiconductor / metal-insulator-metal structures when subjected to constant voltage stress, but with remarkably different fitting parameters. This result suggests a common underlying mechanism in both evolutionary behaviors. Furthermore, the investigation provides additional evidence supporting the micro-structural changes in the oxide after the forming step as well as the role played by the atomic species during the SET event. [ABSTRACT FROM AUTHOR]

A key concern for resistive-switching random access memory (RRAM) is the read noise, due to the structural, chemical, and electrical modifications taking place at the localized current path, or conductive filament (CF). Read noise typically appears as a random telegraph noise (RTN), where the current randomly fluctuates between ON and OFF levels. This paper addresses RTN in RRAM, providing physical interpretations and models for the dependence on the programming and read conditions. First, we explain the RTN dependence on the compliance current during set transition in terms of the size-dependent depletion of carriers within the CF. Then, we discuss the bias dependence of the RTN switching times and amplitude, which can be explained by Joule heating and Poole-Frenkel barrier modifications arising from the electrostatics of the RTN fluctuating center. [ABSTRACT FROM AUTHOR]