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Magnetic tunnel junctions (MTJs) with low switching current, high thermal stability, and small device size are strongly preferred for low-power, high-reliability, and high-density spintronic memory and logic applications. The research of MTJs from shape in-plane magnetic anisotropy to interfacial perpendicular magnetic anisotropy (i-PMA) has successfully paved the way down to 20-nm scale, below which, however, the i-PMA approach reaches a physical limit in sustaining sufficient thermal stability while achieving low-power spin transfer torque switching. Recently, studies have been reported a new approach to pave the way toward sub-10-nm MTJs satisfying the requirements by revisiting shape perpendicular magnetic anisotropy (s-PMA). In this paper, we present a compact model of the sub-10-nm s-PMA MTJ device, which captures both the static and dynamic physical behaviors. This model is SPICE-compatible for hybrid MTJ/CMOS circuit designs. This paper is expected to push forward the development of sub-10-nm-scale MTJ-based spintronic memory and logic circuits. [ABSTRACT FROM AUTHOR]

Although spin transfer torque (STT)-based magnetic tunneling junction (MTJ) owns advantages of nonvolatility, nonlimited endurance, and fast write/read, its demand for high current density significantly casts a shadow over its future prospects. Recently, a novel three-terminal MTJ cell that combines voltage-controlled magnetic anisotropy (VCMA) effect and negative capacitance (NC) effect is proposed. Drawing support from the NC amplified VCMA effect and the three-step operation scenario, this novel MTJ cell can dramatically lower the energy consumption to fJ as well as keep high operation speed within nanoseconds. The feasibility of the proposed NC enhanced VCMA spintronics device for memory and logic application is proved by extensive physical simulation in our previous work. However, a SPICE compatible compact model of the proposed NC enhanced VCMA spintronics device is still demanded for circuit and system level evaluation. In this paper, we provide an accurate and fast compact model of NC enhanced VCMA device for both memory and logic applications. [ABSTRACT FROM AUTHOR]

Magnetic tunnel junctions (MTJs) composed of ferromagnetic layers with perpendicular magnetic anisotropy (PMA) are of great interest for achieving high-density nonvolatile memory and logic chips owing to its scalability potential together with high thermal stability. Recent progress has demonstrated a capacity for high-speed performance and low power consumption through current-induced magnetization switching. In this paper, we present a compact model of the CoFeB/MgO PMA MTJ, a system exhibiting the best tunnel magnetoresistance ratio and switching performance. It integrates the physical models of static, dynamic, and stochastic behaviors; many experimental parameters are directly included to improve the agreement of simulation with experimental measurements. Mixed simulation based on the 65-nm technology node of a magnetic flip-flop validates its relevance and efficiency for MTJ/CMOS memory and logic chip design. [ABSTRACT FROM AUTHOR]