1. A Compact Model with Spin-Polarization Asymmetry for Nanoscaled Perpendicular MTJs.
- Author
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De Rose, Raffaele, Lanuzza, Marco, Carangelo, Greta, Crupi, Felice, d'Aquino, Massimiliano, Finocchio, Giovanni, and Carpentieri, Mario
- Subjects
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POLARIZATION (Electricity) , *SPIN transfer torque , *MAGNETIC tunnelling , *MAGNETIC anisotropy , *RANDOM access memory - Abstract
The aim of this paper is to introduce a compact model for perpendicular spin-transfer torque (STT)-magnetic tunnel junctions (MTJs) implemented in Verilog-A to assure easy integration with electrical circuit simulators. It takes into account the effects of voltage-dependent perpendicular magnetic anisotropy, temperature-dependent parameters, thermal heating/cooling, MTJ process variations, and the spin-torque asymmetry of the Slonczewski spin-polarization function in the switching process. This translates into a comprehensive modeling that was adopted to investigate the writing performance under voltage scaling of a $256\times256$ STT- magnetic random access memory array implemented at three different technology nodes. Obtained results show that scaling from 30- to 20-nm node allows a write energy saving of about 43%, while the supply voltage that assures the minimum-energy write operation increases. [ABSTRACT FROM PUBLISHER]
- Published
- 2017
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