1. Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon.
- Author
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Chai, Yang, Wu, Yi, Takei, Kuniharu, Chen, Hong-Yu, Yu, Shimeng, Chan, Philip C. H., Javey, Ali, and Wong, H.-S. Philip
- Subjects
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NANOELECTROMECHANICAL systems , *BIPOLAR integrated circuits , *SWITCHING circuits , *AMORPHOUS carbon , *RANDOM access memory , *CARBON nanotubes , *ELECTRODES - Abstract
There has been a strong demand for developing an ultradense and low-power nonvolatile memory technology. In this paper, we present a carbon-based resistive random access memory device with a carbon nanotube (CNT) electrode. An amorphous carbon layer is sandwiched between the fast-diffusing top metal electrode and the bottom CNT electrode, exhibiting a bipolar switching behavior. The use of the CNT electrode can substantially reduce the size of the active device area. We also demonstrate a carbon-based complementary resistive switch (CRS) consisting of two back-to-back connected memory cells, providing a route to reduce the sneak current in the cross-point memory. The bit information of the CRS cell is stored in a high-resistance state, thus reducing the power consumption of the CRS memory cell. This paper provides valuable early data on the effect of electrode size scaling down to nanometer size. [ABSTRACT FROM PUBLISHER]
- Published
- 2011
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