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In this paper, indium-tin-oxide (ITO) was used to act as both insulator and top electrode in resistive random access memory (RRAM) on identical bottom substrates. This is achieved by cosputtering an ITO target with nitride (N2) or oxygen (O2) gas as the insulator; then capping by an ITO electrode, such that both the rectifier and RRAM characteristics can be achieved before and after a forming process, respectively. In contrast, using pure ITO as an insulator does not exhibit RRAM behavior. To verify the rectifier and RRAM characteristics, material analyses and electrical measurements at various temperatures were conducted. Reliability tests including retention and endurance were also applied to verify the resistance switching stability. Finally, the rectifier and RRAM conduction models were proposed to examine the resistance switching behaviors. By applying the ITO material as both electrode and insulator, the resistance switching characteristic with high reliability is thus obtained. [ABSTRACT FROM AUTHOR]

There has been a strong demand for developing an ultradense and low-power nonvolatile memory technology. In this paper, we present a carbon-based resistive random access memory device with a carbon nanotube (CNT) electrode. An amorphous carbon layer is sandwiched between the fast-diffusing top metal electrode and the bottom CNT electrode, exhibiting a bipolar switching behavior. The use of the CNT electrode can substantially reduce the size of the active device area. We also demonstrate a carbon-based complementary resistive switch (CRS) consisting of two back-to-back connected memory cells, providing a route to reduce the sneak current in the cross-point memory. The bit information of the CRS cell is stored in a high-resistance state, thus reducing the power consumption of the CRS memory cell. This paper provides valuable early data on the effect of electrode size scaling down to nanometer size. [ABSTRACT FROM PUBLISHER]

Metal/NiO/Pt films with various electrodes were fabricated to investigate the effects of standard free energy (SFE) on NiO resistive switching devices. By selecting Ti, Ta, Ag, Cu, and Co as the top electrodes (TEs), we found that the switching voltage was inversely proportional to the SFE. The reason for this is attributed to the different thicknesses of the oxidized interface between TE and NiO. Since the thickness of the oxidized interface depends on the SFE, this paper provides an effective way to control and adjust the switching voltage. [ABSTRACT FROM PUBLISHER]